A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
High-thermal-conductivity spark plasma sintering silicon carbide ceramic material and preparation method thereof
The invention belongs to the technical field of inorganic non-metallic materials, and relates to a spark plasma sintered silicon carbide ceramic material with high thermal conductivity and a preparation method thereof. The invention discloses a spark plasma sintering silicon carbide ceramic material with high thermal conductivity, which is prepared from the following raw materials in percentage by mass: 85 to 98 percent of submicron silicon carbide powder, 0.01 to 2 percent of micron silicon carbide powder, 1 to 10 percent of rare earth oxide, 0.5 to 3 percent of magnesium oxide, 0.01 to 2 percent of carbon and 0.5 to 2 percent of dispersing agent. The invention further discloses a preparation method of the high-thermal-conductivity spark plasma sintering silicon carbide ceramic material. On the basis of a raw material system taking submicron silicon carbide powder as a raw material and rare earth oxide as a sintering aid, magnesium oxide is added as a second sintering aid, so that the eutectic point and viscosity of a liquid phase are remarkably reduced, the mass transfer efficiency in the sintering process can be effectively promoted, and the densification and grain growth efficiency can be improved; therefore, the heat conductivity of the SiC ceramic is improved.
本发明属于无机非金属材料技术领域，涉及一种高热导率的放电等离子烧结碳化硅陶瓷材料及其制备方法。本发明公开了一种高热导率的放电等离子烧结碳化硅陶瓷材料，所述高热导率的放电等离子烧结碳化硅陶瓷材料的原料，按质量百分比计，包括亚微米级碳化硅粉85～98wt.％，微米级碳化硅粉0.01～2wt.％，稀土氧化物1～10wt.％，氧化镁0.5～3wt.％，碳0.01～2wt.％，分散剂0.5～2wt.％。本发明还公开了一种高热导率的放电等离子烧结碳化硅陶瓷材料的制备方法。本发明在以亚微米级碳化硅粉为原料、稀土氧化物为烧结助剂的原料体系基础上，加入了氧化镁作为第二烧结助剂，显著降低了液相的低共熔点和粘度，能有效促进烧结过程中的传质效率，提高致密化与晶粒生长效率，从而提升了SiC陶瓷的热导率。
High-thermal-conductivity spark plasma sintering silicon carbide ceramic material and preparation method thereof
The invention belongs to the technical field of inorganic non-metallic materials, and relates to a spark plasma sintered silicon carbide ceramic material with high thermal conductivity and a preparation method thereof. The invention discloses a spark plasma sintering silicon carbide ceramic material with high thermal conductivity, which is prepared from the following raw materials in percentage by mass: 85 to 98 percent of submicron silicon carbide powder, 0.01 to 2 percent of micron silicon carbide powder, 1 to 10 percent of rare earth oxide, 0.5 to 3 percent of magnesium oxide, 0.01 to 2 percent of carbon and 0.5 to 2 percent of dispersing agent. The invention further discloses a preparation method of the high-thermal-conductivity spark plasma sintering silicon carbide ceramic material. On the basis of a raw material system taking submicron silicon carbide powder as a raw material and rare earth oxide as a sintering aid, magnesium oxide is added as a second sintering aid, so that the eutectic point and viscosity of a liquid phase are remarkably reduced, the mass transfer efficiency in the sintering process can be effectively promoted, and the densification and grain growth efficiency can be improved; therefore, the heat conductivity of the SiC ceramic is improved.
本发明属于无机非金属材料技术领域，涉及一种高热导率的放电等离子烧结碳化硅陶瓷材料及其制备方法。本发明公开了一种高热导率的放电等离子烧结碳化硅陶瓷材料，所述高热导率的放电等离子烧结碳化硅陶瓷材料的原料，按质量百分比计，包括亚微米级碳化硅粉85～98wt.％，微米级碳化硅粉0.01～2wt.％，稀土氧化物1～10wt.％，氧化镁0.5～3wt.％，碳0.01～2wt.％，分散剂0.5～2wt.％。本发明还公开了一种高热导率的放电等离子烧结碳化硅陶瓷材料的制备方法。本发明在以亚微米级碳化硅粉为原料、稀土氧化物为烧结助剂的原料体系基础上，加入了氧化镁作为第二烧结助剂，显著降低了液相的低共熔点和粘度，能有效促进烧结过程中的传质效率，提高致密化与晶粒生长效率，从而提升了SiC陶瓷的热导率。
High-thermal-conductivity spark plasma sintering silicon carbide ceramic material and preparation method thereof
一种高热导率的放电等离子烧结碳化硅陶瓷材料及其制备方法
LI YINSHENG (author) / HUANG BINWEI (author) / QIAN ZHUANG (author) / YIN ZIQIANG (author) / HUANG QING (author)
2024-07-19
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
SILICON NITRIDE/TITANIUM CARBIDE CERAMIC MATERIAL PREPARATION METHOD BASED ON SPARK PLASMA SINTERING
| European Patent Office | 2022
High thermal conductivity silicon carbide ceramic material and preparation method thereof
| European Patent Office | 2015
Spark plasma sintering method of silicon carbide/tantalum carbide toughened ceramic
| European Patent Office | 2022
| European Patent Office | 2021
High-thermal-conductivity silicon carbide ceramic and preparation method thereof
| European Patent Office | 2023