A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
The invention belongs to the technical field of semiconductors, and particularly discloses an Al-ITZO target material and a preparation method and application thereof. The Al-ITZO target material is prepared from the following raw materials: indium oxide, tin oxide, zinc oxide, aluminum oxide, a binder and a plasticizer. The Al-ITZO target material has the advantage of high ion mobility when used as a channel layer material in a thin film transistor (TFT) device, the mobility of the Al-ITZO target material can reach 38 cm < 2 >. V <-1 >. S <-1 > or above, compared with IGZO, the mobility of the Al-ITZO target material is greatly improved, the sub-threshold swing (SS) value of the Al-ITZO target material is extremely low, the Al-ITZO target material has the advantage of high stability, the cost of the Al-ITZO target material is lower, and the Al-ITZO target material is suitable for large-scale production. The raw material source is wider. The invention further provides a preparation method and application of the Al-ITZO target material.
本发明属于半导体技术领域，具体公开了一种Al‑ITZO靶材及其制备方法和应用。本发明的Al‑ITZO靶材制备原料包括氧化铟、氧化锡、氧化锌、氧化铝，还包括粘结剂、增塑剂。本发明的Al‑ITZO靶材在薄膜晶体管(TFT)器件中作为沟道层材料应用时具备高离子迁移率优势，其迁移率最高可以达到38cm2·V‑1·S‑1以上，相较于IGZO具有大幅提升，该Al‑ITZO靶材的亚阈值摆幅(SS)值极低，显示出高稳定性的优势，并且本发明的Al‑ITZO靶材成本更低，原料来源更广泛。本发明还提供该Al‑ITZO靶材的制备方法和应用。
The invention belongs to the technical field of semiconductors, and particularly discloses an Al-ITZO target material and a preparation method and application thereof. The Al-ITZO target material is prepared from the following raw materials: indium oxide, tin oxide, zinc oxide, aluminum oxide, a binder and a plasticizer. The Al-ITZO target material has the advantage of high ion mobility when used as a channel layer material in a thin film transistor (TFT) device, the mobility of the Al-ITZO target material can reach 38 cm < 2 >. V <-1 >. S <-1 > or above, compared with IGZO, the mobility of the Al-ITZO target material is greatly improved, the sub-threshold swing (SS) value of the Al-ITZO target material is extremely low, the Al-ITZO target material has the advantage of high stability, the cost of the Al-ITZO target material is lower, and the Al-ITZO target material is suitable for large-scale production. The raw material source is wider. The invention further provides a preparation method and application of the Al-ITZO target material.
本发明属于半导体技术领域，具体公开了一种Al‑ITZO靶材及其制备方法和应用。本发明的Al‑ITZO靶材制备原料包括氧化铟、氧化锡、氧化锌、氧化铝，还包括粘结剂、增塑剂。本发明的Al‑ITZO靶材在薄膜晶体管(TFT)器件中作为沟道层材料应用时具备高离子迁移率优势，其迁移率最高可以达到38cm2·V‑1·S‑1以上，相较于IGZO具有大幅提升，该Al‑ITZO靶材的亚阈值摆幅(SS)值极低，显示出高稳定性的优势，并且本发明的Al‑ITZO靶材成本更低，原料来源更广泛。本发明还提供该Al‑ITZO靶材的制备方法和应用。
Al-ITZO target material and preparation method and application thereof
一种Al-ITZO靶材及其制备方法和应用
2024-08-09
Patent
Electronic Resource
Chinese
Superconducting target material and preparation method and application thereof
| European Patent Office | 2022
Oxide target material and preparation method and application thereof
| European Patent Office | 2023
IWZO target material and preparation method and application thereof
| European Patent Office | 2023
IWO target material and preparation method and application thereof
| European Patent Office | 2021
Metal oxide target material and preparation method and application thereof
| European Patent Office | 2023