A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Rare earth element Sm-doped lead hafnium stannate-based anti-ferroelectric ceramic, preparation method and application
The invention provides rare earth element Sm-doped lead hafnium stannate-based antiferroelectric ceramic, a preparation method and application, Sn ions are introduced into a traditional lead hafnium stannate matrix to enter a lattice B site, the relaxation characteristic of a material is enhanced, and the antiferroelectricity of the material is enhanced; meanwhile, a rare earth element Sm is introduced into a lead hafnium stannate matrix, and a heterovalent ion Sm < 3 + > is introduced to a site A, so that the original crystal structure is distorted, the tolerance factor is reduced, the antiferroelectricity is further enhanced, the original long-range ordered structure arrangement is damaged, the structure and performance of a local region are greatly changed, phase change is induced, and a random field is induced; the formation of a nano domain is facilitated, so that a domain overturning potential barrier is reduced, and the remanent polarization intensity is further reduced; moreover, due to heterovalent ion Sm substitution, A-site vacancy is formed, the number and migration rate of carriers can be inhibited to a certain extent, the breakdown strength is promoted, the energy storage characteristic is further improved, and the material has a good application prospect in pulse power.
本发明提供一种稀土元素Sm掺杂的铪锡酸铅基反铁电陶瓷、制备方法及应用，在传统铪酸铅基体上，引入Sn离子进入晶格B位，增强材料的弛豫特性并增强其反铁电性；同时，在铪锡酸铅基体中，引入稀土元素Sm，向A位引入了异价离子Sm3+，使得原本的晶体结构发生畸变，容忍因子降低，反铁电性进一步增强，原本长程有序的结构排列被破坏，致使局部区域的结构和性能发生大的改变，诱导相变发生并诱发随机场，有利于形成纳米畴，使得畴翻转势垒降低，剩余极化强度进一步减小；并且，由于异价离子Sm取代，形成了A位空位，在一定程度有利于抑制载流子的数量和迁移速率，对击穿强度有促进作用，储能特性进一步提升，在脉冲功率中具有良好的应用前景。
Rare earth element Sm-doped lead hafnium stannate-based anti-ferroelectric ceramic, preparation method and application
The invention provides rare earth element Sm-doped lead hafnium stannate-based antiferroelectric ceramic, a preparation method and application, Sn ions are introduced into a traditional lead hafnium stannate matrix to enter a lattice B site, the relaxation characteristic of a material is enhanced, and the antiferroelectricity of the material is enhanced; meanwhile, a rare earth element Sm is introduced into a lead hafnium stannate matrix, and a heterovalent ion Sm < 3 + > is introduced to a site A, so that the original crystal structure is distorted, the tolerance factor is reduced, the antiferroelectricity is further enhanced, the original long-range ordered structure arrangement is damaged, the structure and performance of a local region are greatly changed, phase change is induced, and a random field is induced; the formation of a nano domain is facilitated, so that a domain overturning potential barrier is reduced, and the remanent polarization intensity is further reduced; moreover, due to heterovalent ion Sm substitution, A-site vacancy is formed, the number and migration rate of carriers can be inhibited to a certain extent, the breakdown strength is promoted, the energy storage characteristic is further improved, and the material has a good application prospect in pulse power.
本发明提供一种稀土元素Sm掺杂的铪锡酸铅基反铁电陶瓷、制备方法及应用，在传统铪酸铅基体上，引入Sn离子进入晶格B位，增强材料的弛豫特性并增强其反铁电性；同时，在铪锡酸铅基体中，引入稀土元素Sm，向A位引入了异价离子Sm3+，使得原本的晶体结构发生畸变，容忍因子降低，反铁电性进一步增强，原本长程有序的结构排列被破坏，致使局部区域的结构和性能发生大的改变，诱导相变发生并诱发随机场，有利于形成纳米畴，使得畴翻转势垒降低，剩余极化强度进一步减小；并且，由于异价离子Sm取代，形成了A位空位，在一定程度有利于抑制载流子的数量和迁移速率，对击穿强度有促进作用，储能特性进一步提升，在脉冲功率中具有良好的应用前景。
Rare earth element Sm-doped lead hafnium stannate-based anti-ferroelectric ceramic, preparation method and application
一种稀土元素Sm掺杂的铪锡酸铅基反铁电陶瓷、制备方法及应用
WANG GENSHUI (author) / DENG TAO (author) / HU TENGFEI (author) / LIU ZHEN (author)
2024-09-10
Patent
Electronic Resource
Chinese
Lead hafnium stannate-based anti-ferroelectric ceramic material and preparation method thereof
| European Patent Office | 2023
| European Patent Office | 2023
Hafnium lead titanate-based anti-ferroelectric ceramic material and preparation method thereof
| European Patent Office | 2021
| European Patent Office | 2020
| British Library Online Contents | 2004