A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Preparation method of low-density ITO (Indium Tin Oxide) evaporation target material
The invention provides a preparation method of a low-density ITO (Indium Tin Oxide) evaporation target material, which comprises the following steps of: 1, mixing indium oxide and tin oxide according to the component proportioning requirement to obtain mixed powder, and then doping a granulation auxiliary agent to obtain ITO slurry; 2, the ITO slurry is subjected to granulation treatment, and ITO granulation powder is obtained; 3, dividing the ITO granulation powder into two parts; 4, pre-sintering the ITO granulation powder of the first part to obtain pre-sintered powder; 5, mixing the pre-sintered powder with the ITO granulation powder of the second part, and carrying out pre-pressing molding to obtain an ITO biscuit; 6, putting the ITO biscuit into a degreasing furnace for degreasing treatment; and 7, putting the treated ITO biscuit into a sintering furnace, and carrying out sintering treatment in a normal-pressure air atmosphere. The pre-sintered powder serves as a large-particle framework in the sintering process, so that the target material has low relative density and high bonding strength, the thermal shock resistance of the target material is improved, and the problem that a film is not uniform due to cracking of the target material in the evaporation process is effectively solved.
本发明提供一种低密度ITO蒸镀靶材的制备方法，包括以下步骤：一、根据成分配比要求，将氧化铟与氧化锡进行混合得到混合粉体，然后掺入造粒助剂，得到ITO浆料；二、将ITO浆料进行造粒处理，得到ITO造粒粉体；三、将ITO造粒粉体分成两部分；四、将第一部分的ITO造粒粉体进行预烧，得到预烧粉体；五、将预烧粉体与第二部分的ITO造粒粉体混合，并进行预压成型，得到ITO素坯；六、将ITO素坯放入脱脂炉中进行脱脂处理；七、将处理后的ITO素坯放入烧结炉内在常压空气气氛中进行烧结处理。预烧粉体在烧结过程中充当大颗粒骨架，使得靶材在具有低相对密度的同时，还兼具较高的结合强度，提高靶材的抗热冲击性，有效避免蒸镀过程中靶材开裂导致薄膜不均匀的问题。
Preparation method of low-density ITO (Indium Tin Oxide) evaporation target material
The invention provides a preparation method of a low-density ITO (Indium Tin Oxide) evaporation target material, which comprises the following steps of: 1, mixing indium oxide and tin oxide according to the component proportioning requirement to obtain mixed powder, and then doping a granulation auxiliary agent to obtain ITO slurry; 2, the ITO slurry is subjected to granulation treatment, and ITO granulation powder is obtained; 3, dividing the ITO granulation powder into two parts; 4, pre-sintering the ITO granulation powder of the first part to obtain pre-sintered powder; 5, mixing the pre-sintered powder with the ITO granulation powder of the second part, and carrying out pre-pressing molding to obtain an ITO biscuit; 6, putting the ITO biscuit into a degreasing furnace for degreasing treatment; and 7, putting the treated ITO biscuit into a sintering furnace, and carrying out sintering treatment in a normal-pressure air atmosphere. The pre-sintered powder serves as a large-particle framework in the sintering process, so that the target material has low relative density and high bonding strength, the thermal shock resistance of the target material is improved, and the problem that a film is not uniform due to cracking of the target material in the evaporation process is effectively solved.
本发明提供一种低密度ITO蒸镀靶材的制备方法，包括以下步骤：一、根据成分配比要求，将氧化铟与氧化锡进行混合得到混合粉体，然后掺入造粒助剂，得到ITO浆料；二、将ITO浆料进行造粒处理，得到ITO造粒粉体；三、将ITO造粒粉体分成两部分；四、将第一部分的ITO造粒粉体进行预烧，得到预烧粉体；五、将预烧粉体与第二部分的ITO造粒粉体混合，并进行预压成型，得到ITO素坯；六、将ITO素坯放入脱脂炉中进行脱脂处理；七、将处理后的ITO素坯放入烧结炉内在常压空气气氛中进行烧结处理。预烧粉体在烧结过程中充当大颗粒骨架，使得靶材在具有低相对密度的同时，还兼具较高的结合强度，提高靶材的抗热冲击性，有效避免蒸镀过程中靶材开裂导致薄膜不均匀的问题。
Preparation method of low-density ITO (Indium Tin Oxide) evaporation target material
一种低密度ITO蒸镀靶材的制备方法
LUO YUN (author) / LIU YANG (author) / ZHAO HETAO (author) / LIU XIAOKAI (author) / WU ZHAOKUAN (author) / YING JIANCUN (author)
2024-09-24
Patent
Electronic Resource
Chinese
Preparation method of indium tin oxide evaporation target material
| European Patent Office | 2021
Indium zinc oxide evaporation target material and preparation method thereof
| European Patent Office | 2023
| European Patent Office | 2023
High-density indium tungsten oxide target material and preparation method thereof
| European Patent Office | 2024
High-density indium cerium oxide target material and preparation method thereof
| European Patent Office | 2023