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High-density indium cerium oxide target material and preparation method thereof
The invention belongs to the technical field of semiconductors and oxide target materials, and discloses a high-density indium cerium oxide target material and a preparation method thereof. The preparation method comprises the following steps: carrying out wet ball milling on CeO2 and In2O3 powder, a dispersant, a binder and deionized water to obtain mixed slurry; drying, crushing and sieving the mixed slurry, then calcining in an air atmosphere at the temperature of 600-1000 DEG C, and carrying out compression molding to obtain a target blank; the obtained target blank is subjected to degreasing heat treatment in the normal-pressure oxygen atmosphere at the temperature of 600-800 DEG C; the target blank obtained after degreasing heat treatment is put into vacuum equipment to be subjected to vacuumizing treatment, and then oxygenation treatment is conducted till the pressure ranges from 50 KPa to 80 KPa; and finally, sintering the treated target material at 1450-1550 DEG C under the normal-pressure air condition to obtain the high-density indium cerium oxide target material. The method can significantly improve the relative density of the indium cerium oxide target material, reduce the number of pores and improve the thermal conductivity.
本发明属于半导体及氧化物靶材技术领域，公开了一种高密度氧化铟铈靶材及其制备方法。所述制备方法包括如下步骤：将CeO2、In2O3粉末与分散剂、粘结剂和去离子水经湿法球磨，得到混合浆料；将混合浆料经干燥、粉碎、过筛，然后在空气气氛及600～1000℃温度下煅烧处理，压制成型，得到靶坯；再将所得靶坯在600～800℃常压氧气气氛中进行脱脂热处理；将脱脂热处理后的靶坯放入真空设备中进行抽真空处理，再进行充氧处理至压力为50～80KPa；最后将处理后的靶材在1450～1550℃常压空气条件下进行烧结处理，得到高密度氧化铟铈靶材。本发明方法可以显著提高氧化铟铈靶材相对密度，减少气孔数量和提高导热率。
High-density indium cerium oxide target material and preparation method thereof
The invention belongs to the technical field of semiconductors and oxide target materials, and discloses a high-density indium cerium oxide target material and a preparation method thereof. The preparation method comprises the following steps: carrying out wet ball milling on CeO2 and In2O3 powder, a dispersant, a binder and deionized water to obtain mixed slurry; drying, crushing and sieving the mixed slurry, then calcining in an air atmosphere at the temperature of 600-1000 DEG C, and carrying out compression molding to obtain a target blank; the obtained target blank is subjected to degreasing heat treatment in the normal-pressure oxygen atmosphere at the temperature of 600-800 DEG C; the target blank obtained after degreasing heat treatment is put into vacuum equipment to be subjected to vacuumizing treatment, and then oxygenation treatment is conducted till the pressure ranges from 50 KPa to 80 KPa; and finally, sintering the treated target material at 1450-1550 DEG C under the normal-pressure air condition to obtain the high-density indium cerium oxide target material. The method can significantly improve the relative density of the indium cerium oxide target material, reduce the number of pores and improve the thermal conductivity.
本发明属于半导体及氧化物靶材技术领域，公开了一种高密度氧化铟铈靶材及其制备方法。所述制备方法包括如下步骤：将CeO2、In2O3粉末与分散剂、粘结剂和去离子水经湿法球磨，得到混合浆料；将混合浆料经干燥、粉碎、过筛，然后在空气气氛及600～1000℃温度下煅烧处理，压制成型，得到靶坯；再将所得靶坯在600～800℃常压氧气气氛中进行脱脂热处理；将脱脂热处理后的靶坯放入真空设备中进行抽真空处理，再进行充氧处理至压力为50～80KPa；最后将处理后的靶材在1450～1550℃常压空气条件下进行烧结处理，得到高密度氧化铟铈靶材。本发明方法可以显著提高氧化铟铈靶材相对密度，减少气孔数量和提高导热率。
High-density indium cerium oxide target material and preparation method thereof
一种高密度氧化铟铈靶材及其制备方法
TAN HONGLEI (author) / SHAO XUELIANG (author) / LI KAIJIE (author) / GU DESHENG (author) / ZHANG XINGYU (author)
2023-12-08
Patent
Electronic Resource
Chinese
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