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Aluminum nitride ceramic high-temperature annealing method
The invention discloses a high-temperature annealing method for aluminum nitride ceramic. The method comprises the following steps: S1, cleaning the surface of the aluminum nitride ceramic by using absolute ethyl alcohol and pure water; s2, the product is soaked in a mixed acid solution prepared from HF and HNO3 for surface acid pickling; s3, the product is placed in a solution formed by mixing pure water and absolute ethyl alcohol, and ultrasonic cleaning is conducted; s4, the cleaned aluminum nitride ceramic is placed in a boron nitride jig, and the boron nitride jig is placed in a vacuum sintering furnace; s5, annealing is started, the room temperature is increased to 600 DEG C, and the vacuum state is kept; s6, raising the temperature to 1500 DEG C from 600 DEG C, continuously introducing nitrogen, and keeping the temperature after the temperature rise is completed; and S7, the temperature is reduced to the room temperature, nitrogen is continuously introduced, and annealing is completed. According to the method, the internal stress accumulation of the ceramic is effectively eliminated by accurately controlling the heat treatment environment and process parameters, the dimensional stability and the use reliability of a final product are ensured, and the strict requirements of semiconductor manufacturing on high-performance materials are met.
本发明公开了一种氮化铝陶瓷高温退火方法，包括以下步骤：S1:使用无水乙醇和纯水清洗氮化铝陶瓷表面；S2:将产品浸泡在由HF和HNO3配制的混合酸溶液中，进行表面酸洗；S3:将产品置于由纯水和无水乙醇混合的溶液中，进行超声波清洗；S4:将清洗后的氮化铝陶瓷置于氮化硼治具内，并置入真空烧结炉内；S5：退火开始，室温升至600℃，保持真空状态；S6：600℃升至1500℃，持续通入氮气，升温完成后保温；S7：降温至室温，持续通入氮气，退火完成。本方法通过精准控制热处理环境和工艺参数，有效消除陶瓷内部应力积累，确保最终产品的尺寸稳定性和使用可靠性，满足半导体制造对高性能材料的严格要求。
Aluminum nitride ceramic high-temperature annealing method
The invention discloses a high-temperature annealing method for aluminum nitride ceramic. The method comprises the following steps: S1, cleaning the surface of the aluminum nitride ceramic by using absolute ethyl alcohol and pure water; s2, the product is soaked in a mixed acid solution prepared from HF and HNO3 for surface acid pickling; s3, the product is placed in a solution formed by mixing pure water and absolute ethyl alcohol, and ultrasonic cleaning is conducted; s4, the cleaned aluminum nitride ceramic is placed in a boron nitride jig, and the boron nitride jig is placed in a vacuum sintering furnace; s5, annealing is started, the room temperature is increased to 600 DEG C, and the vacuum state is kept; s6, raising the temperature to 1500 DEG C from 600 DEG C, continuously introducing nitrogen, and keeping the temperature after the temperature rise is completed; and S7, the temperature is reduced to the room temperature, nitrogen is continuously introduced, and annealing is completed. According to the method, the internal stress accumulation of the ceramic is effectively eliminated by accurately controlling the heat treatment environment and process parameters, the dimensional stability and the use reliability of a final product are ensured, and the strict requirements of semiconductor manufacturing on high-performance materials are met.
本发明公开了一种氮化铝陶瓷高温退火方法，包括以下步骤：S1:使用无水乙醇和纯水清洗氮化铝陶瓷表面；S2:将产品浸泡在由HF和HNO3配制的混合酸溶液中，进行表面酸洗；S3:将产品置于由纯水和无水乙醇混合的溶液中，进行超声波清洗；S4:将清洗后的氮化铝陶瓷置于氮化硼治具内，并置入真空烧结炉内；S5：退火开始，室温升至600℃，保持真空状态；S6：600℃升至1500℃，持续通入氮气，升温完成后保温；S7：降温至室温，持续通入氮气，退火完成。本方法通过精准控制热处理环境和工艺参数，有效消除陶瓷内部应力积累，确保最终产品的尺寸稳定性和使用可靠性，满足半导体制造对高性能材料的严格要求。
Aluminum nitride ceramic high-temperature annealing method
一种氮化铝陶瓷高温退火方法
SUN ZHONGHUI (author) / MA YUQI (author) / XU JINGDONG (author)
2024-10-01
Patent
Electronic Resource
Chinese
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