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Preparation method of high-density cerium-doped indium oxide target material
The invention discloses a preparation method of a high-density cerium-doped indium oxide target material, which comprises the following steps: carrying out wet ball milling on raw material powder to obtain ICO slurry, granulating the ICO slurry to obtain ICO granulated powder, carrying out first compression molding on the ICO granulated powder to obtain an ICO green body, degreasing the ICO green body, carrying out multiple compression molding treatment to obtain an ICO biscuit, and sintering the ICO green body to obtain the high-density cerium-doped indium oxide target material. And sintering the ICO biscuit to obtain the cerium-doped indium oxide target material. The raw material powder is composed of In2O3 coarse powder, In2O3 fine powder and CeO2 powder; the particle size of the In2O3 coarse powder ranges from 120 nm to 300 nm, and the particle size of the In2O3 fine powder ranges from 20 nm to 50 nm. According to the method, the bottleneck problem of the preparation technology of the high-density ICO target material is solved, the obtained ICO sintered target material has the excellent properties of high density, low resistivity and high strength, and the method is simple in technological process, low in cost, green, free of pollution and suitable for large-scale production.
本发明公开了一种高密度铈掺杂氧化铟靶材的制备方法，将原料粉末进行湿法球磨获得ICO浆料，将ICO浆料经造粒，得ICO造粒粉体，将ICO造粒粉体进行第一次压制成型获得ICO坯体，将ICO坯体脱脂后，再经多次压制成型处理获得ICO素坯，将ICO素坯进行烧结即得铈掺杂氧化铟靶材；所述原料粉末由In2O3粗粉、In2O3细粉、CeO2粉组成；所述In2O3粗粉的粒径为120‑300nm，所述In2O3细粉的粒径为20‑50nm。本发明解决了高密度ICO靶材的制备技术瓶颈问题，所得ICO烧结靶材具有高密度、低电阻率和高强度的优异性质，工艺流程简单、成本低、绿色无污染，适合规模化生产。
Preparation method of high-density cerium-doped indium oxide target material
The invention discloses a preparation method of a high-density cerium-doped indium oxide target material, which comprises the following steps: carrying out wet ball milling on raw material powder to obtain ICO slurry, granulating the ICO slurry to obtain ICO granulated powder, carrying out first compression molding on the ICO granulated powder to obtain an ICO green body, degreasing the ICO green body, carrying out multiple compression molding treatment to obtain an ICO biscuit, and sintering the ICO green body to obtain the high-density cerium-doped indium oxide target material. And sintering the ICO biscuit to obtain the cerium-doped indium oxide target material. The raw material powder is composed of In2O3 coarse powder, In2O3 fine powder and CeO2 powder; the particle size of the In2O3 coarse powder ranges from 120 nm to 300 nm, and the particle size of the In2O3 fine powder ranges from 20 nm to 50 nm. According to the method, the bottleneck problem of the preparation technology of the high-density ICO target material is solved, the obtained ICO sintered target material has the excellent properties of high density, low resistivity and high strength, and the method is simple in technological process, low in cost, green, free of pollution and suitable for large-scale production.
本发明公开了一种高密度铈掺杂氧化铟靶材的制备方法，将原料粉末进行湿法球磨获得ICO浆料，将ICO浆料经造粒，得ICO造粒粉体，将ICO造粒粉体进行第一次压制成型获得ICO坯体，将ICO坯体脱脂后，再经多次压制成型处理获得ICO素坯，将ICO素坯进行烧结即得铈掺杂氧化铟靶材；所述原料粉末由In2O3粗粉、In2O3细粉、CeO2粉组成；所述In2O3粗粉的粒径为120‑300nm，所述In2O3细粉的粒径为20‑50nm。本发明解决了高密度ICO靶材的制备技术瓶颈问题，所得ICO烧结靶材具有高密度、低电阻率和高强度的优异性质，工艺流程简单、成本低、绿色无污染，适合规模化生产。
Preparation method of high-density cerium-doped indium oxide target material
一种高密度铈掺杂氧化铟靶材的制备方法
MEI FANGSHENG (author) / CHEN MINGWEI (author) / CUI YAN (author)
2024-10-15
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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