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Gadolinium-doped high-energy-storage relaxation antiferroelectric sodium niobate-based ceramic material as well as preparation method and application thereof
The invention relates to a gadolinium-doped high-energy-storage relaxation anti-ferroelectric sodium niobate-based ceramic material as well as a preparation method and application thereof. The chemical composition of the gadolinium-doped high-energy-storage relaxation anti-ferroelectric sodium niobate-based ceramic material is Na < 1-3x > Gd < x > NbO < 3 >, wherein x is greater than 0.04 and less than 0.12, preferably x is greater than or equal to 0.06 and less than or equal to 0.10, and more preferably, x is 0.08.
本发明涉及一种钆掺杂高储能弛豫反铁电铌酸钠基陶瓷材料及其制备方法和应用。所述钆掺杂高储能弛豫反铁电铌酸钠基陶瓷材料的化学组成为Na1‑3xGdxNbO3；其中，0.04＜x＜0.12，优选为0.06≤x≤0.10，更优选为0.08。
Gadolinium-doped high-energy-storage relaxation antiferroelectric sodium niobate-based ceramic material as well as preparation method and application thereof
The invention relates to a gadolinium-doped high-energy-storage relaxation anti-ferroelectric sodium niobate-based ceramic material as well as a preparation method and application thereof. The chemical composition of the gadolinium-doped high-energy-storage relaxation anti-ferroelectric sodium niobate-based ceramic material is Na < 1-3x > Gd < x > NbO < 3 >, wherein x is greater than 0.04 and less than 0.12, preferably x is greater than or equal to 0.06 and less than or equal to 0.10, and more preferably, x is 0.08.
本发明涉及一种钆掺杂高储能弛豫反铁电铌酸钠基陶瓷材料及其制备方法和应用。所述钆掺杂高储能弛豫反铁电铌酸钠基陶瓷材料的化学组成为Na1‑3xGdxNbO3；其中，0.04＜x＜0.12，优选为0.06≤x≤0.10，更优选为0.08。
Gadolinium-doped high-energy-storage relaxation antiferroelectric sodium niobate-based ceramic material as well as preparation method and application thereof
一种钆掺杂高储能弛豫反铁电铌酸钠基陶瓷材料及其制备方法和应用
WANG GENSHUI (author) / LYU ZHONGQIAN (author) / LIU ZHEN (author) / GUO SHAOBO (author)
2024-11-15
Patent
Electronic Resource
Chinese
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