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Binary relaxation antiferroelectric energy storage ceramic material and preparation method and application thereof
The invention discloses a binary relaxation antiferroelectric energy storage ceramic material and a preparation method and application thereof, the chemical formula of the binary relaxation antiferroelectric energy storage ceramic material is (1-x) AgNbO3-xBi (Mg2/3Nb1/3) O3, and x is equal to 0.005-0.01. The invention also specifically discloses a preparation method of the binary relaxation antiferroelectric energy storage ceramic material and application of the binary relaxation antiferroelectric energy storage ceramic material in preparation of a ceramic capacitor. According to the AgNbO3 anti-ferroelectric energy storage ceramic material and the preparation method thereof, Bi (Mg2/3Nb1/3) O3 is added to optimize the AgNbO3 anti-ferroelectric energy storage ceramic material and the preparation process, the high-quality (1-x) AgNbO3-xBi (Mg2/3Nb1/3) O3 energy storage ceramic material is finally obtained, the energy storage ceramic material can effectively stabilize the stability of an anti-ferroelectric phase of AgNbO3 at the room temperature, and then the energy storage density and conversion efficiency of the energy storage ceramic material are greatly improved.
本发明公开了一种二元弛豫反铁电储能陶瓷材料及其制备方法和应用，其中二元弛豫反铁电储能陶瓷材料的化学式为(1‑x)AgNbO3‑xBi(Mg2/3Nb1/3)O3，其中x=0.005~0.01，本发明还具体公开了二元弛豫反铁电储能陶瓷材料的制备方法及其在制备陶瓷电容器中的应用。本发明通过加入Bi(Mg2/3Nb1/3)O3对AgNbO3反铁电储能陶瓷材料及制备工艺进行优化，最终获得高质量的(1‑x)AgNbO3‑xBi(Mg2/3Nb1/3)O3储能陶瓷材料，该储能陶瓷材料能够有效稳定AgNbO3在室温下反铁电相的稳定性，进而大幅度提高储能陶瓷材料的储能密度和转化效率。
Binary relaxation antiferroelectric energy storage ceramic material and preparation method and application thereof
The invention discloses a binary relaxation antiferroelectric energy storage ceramic material and a preparation method and application thereof, the chemical formula of the binary relaxation antiferroelectric energy storage ceramic material is (1-x) AgNbO3-xBi (Mg2/3Nb1/3) O3, and x is equal to 0.005-0.01. The invention also specifically discloses a preparation method of the binary relaxation antiferroelectric energy storage ceramic material and application of the binary relaxation antiferroelectric energy storage ceramic material in preparation of a ceramic capacitor. According to the AgNbO3 anti-ferroelectric energy storage ceramic material and the preparation method thereof, Bi (Mg2/3Nb1/3) O3 is added to optimize the AgNbO3 anti-ferroelectric energy storage ceramic material and the preparation process, the high-quality (1-x) AgNbO3-xBi (Mg2/3Nb1/3) O3 energy storage ceramic material is finally obtained, the energy storage ceramic material can effectively stabilize the stability of an anti-ferroelectric phase of AgNbO3 at the room temperature, and then the energy storage density and conversion efficiency of the energy storage ceramic material are greatly improved.
本发明公开了一种二元弛豫反铁电储能陶瓷材料及其制备方法和应用，其中二元弛豫反铁电储能陶瓷材料的化学式为(1‑x)AgNbO3‑xBi(Mg2/3Nb1/3)O3，其中x=0.005~0.01，本发明还具体公开了二元弛豫反铁电储能陶瓷材料的制备方法及其在制备陶瓷电容器中的应用。本发明通过加入Bi(Mg2/3Nb1/3)O3对AgNbO3反铁电储能陶瓷材料及制备工艺进行优化，最终获得高质量的(1‑x)AgNbO3‑xBi(Mg2/3Nb1/3)O3储能陶瓷材料，该储能陶瓷材料能够有效稳定AgNbO3在室温下反铁电相的稳定性，进而大幅度提高储能陶瓷材料的储能密度和转化效率。
Binary relaxation antiferroelectric energy storage ceramic material and preparation method and application thereof
一种二元弛豫反铁电储能陶瓷材料及其制备方法和应用
ZHANG NA (author) / JIA PEIPEI (author) / SONG GUILIN (author) / ZHU MIAOMIAO (author) / ZHANG XIAOMING (author) / PAN QIANXI (author) / ZHANG XINXIN (author)
2024-11-22
Patent
Electronic Resource
Chinese
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