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Synthesis method of niobium dioxide-doped electronic phase change material
The invention discloses a method for synthesizing a fluxing agent of a niobium dioxide-doped sensitive resistance material, and belongs to the field of thermosensitive electronic phase change. In particular to a method for reducing reaction temperature by using a cosolvent, which comprises the following steps of: preparing high-valence niobium precursor and low-valence niobium precursor, and carrying out fluxing reaction under inert or vacuum atmosphere to synthesize a niobium dioxide-doped electronic phase change material in batches so as to prepare powder, ceramic or thin-film material. By introducing the alkali metal halide fluxing agent with crystal lattice parameters similar to those of the synthetic material, a non-uniform nucleation condition is provided for new phase growth, free energy of new phase nucleation growth is reduced, the reaction temperature and reaction time required by material synthesis are greatly reduced, and the synthesis efficiency is improved. And the high-purity and high-uniformity material can be prepared in an adjustable atmosphere. The preparation method is simple, the reaction speed is high, energy consumption is reduced, the chemical formula of the prepared niobium dioxide-doped electronic phase change material is Nb (1-x) MxO2: M is a rare earth element or a transition metal element, and the niobium dioxide-doped electronic phase change material has considerable application value in the fields of high-temperature thermistors, critical temperature coefficient thermistors, nonvolatile memories, sensors and the like.
一种掺杂二氧化铌敏感电阻材料的助熔剂合成方法，属于热敏电子相变领域。具体地涉及一种使用助溶剂降低反应温度的方法，通过高、低价态铌前驱体配料、惰性或真空气氛下的助熔反应，批量合成掺杂二氧化铌电子相变材料，制备出粉体、陶瓷或薄膜材料。本发明通过引入与合成材料晶格参数相近的碱金属卤化物助熔剂，为新相生长提供了非均匀形核条件，降低了新相形核生长的自由能，大幅降低材料合成所需反应温度与反应时间，可实现高纯度高均匀性的材料在可调控的气氛下的放量制备。反应速度快、减少了能源消耗，所制备的掺杂二氧化铌电子相变材料化学式为Nb1‑xMxO2：M为稀土元素或过渡族金属元素，在高温热敏电阻、临界温度系数热敏电阻、非易失性存储、传感器等领域具有可观的应用价值。
Synthesis method of niobium dioxide-doped electronic phase change material
The invention discloses a method for synthesizing a fluxing agent of a niobium dioxide-doped sensitive resistance material, and belongs to the field of thermosensitive electronic phase change. In particular to a method for reducing reaction temperature by using a cosolvent, which comprises the following steps of: preparing high-valence niobium precursor and low-valence niobium precursor, and carrying out fluxing reaction under inert or vacuum atmosphere to synthesize a niobium dioxide-doped electronic phase change material in batches so as to prepare powder, ceramic or thin-film material. By introducing the alkali metal halide fluxing agent with crystal lattice parameters similar to those of the synthetic material, a non-uniform nucleation condition is provided for new phase growth, free energy of new phase nucleation growth is reduced, the reaction temperature and reaction time required by material synthesis are greatly reduced, and the synthesis efficiency is improved. And the high-purity and high-uniformity material can be prepared in an adjustable atmosphere. The preparation method is simple, the reaction speed is high, energy consumption is reduced, the chemical formula of the prepared niobium dioxide-doped electronic phase change material is Nb (1-x) MxO2: M is a rare earth element or a transition metal element, and the niobium dioxide-doped electronic phase change material has considerable application value in the fields of high-temperature thermistors, critical temperature coefficient thermistors, nonvolatile memories, sensors and the like.
一种掺杂二氧化铌敏感电阻材料的助熔剂合成方法，属于热敏电子相变领域。具体地涉及一种使用助溶剂降低反应温度的方法，通过高、低价态铌前驱体配料、惰性或真空气氛下的助熔反应，批量合成掺杂二氧化铌电子相变材料，制备出粉体、陶瓷或薄膜材料。本发明通过引入与合成材料晶格参数相近的碱金属卤化物助熔剂，为新相生长提供了非均匀形核条件，降低了新相形核生长的自由能，大幅降低材料合成所需反应温度与反应时间，可实现高纯度高均匀性的材料在可调控的气氛下的放量制备。反应速度快、减少了能源消耗，所制备的掺杂二氧化铌电子相变材料化学式为Nb1‑xMxO2：M为稀土元素或过渡族金属元素，在高温热敏电阻、临界温度系数热敏电阻、非易失性存储、传感器等领域具有可观的应用价值。
Synthesis method of niobium dioxide-doped electronic phase change material
一种掺杂二氧化铌电子相变材料的合成方法
CHEN JIKUN (author) / LIU JINGSHAN (author) / MENG KANGKANG (author)
2024-11-29
Patent
Electronic Resource
Chinese
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