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Positive temperature coefficient (PTC) semiconductor ceramic composition, method for producing semiconductor ceramic, heating device and use
The invention relates to a composition for a semiconductor ceramic, said composition having, as a main component, a BaTiO3-based compound according to the following molecular formula: [BabCacSrsPbpRx] [TitAaMnm] O3 + z, where R is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, where A is at least one element selected from the group consisting of V, Nb and Ta, where z is at least one element selected from the group consisting of V, Nb and Ta. The variables b, c, s, p, x, t, a, m and z are defined in the following manner: b = 1-c-s-p-x0lt; c + s + plt; the method comprises the following steps of: obtaining 0.510.490 Blt; 0.9999. 0 lt, 0.9999. 0 lt; clt; ct; 0.50.0 lt, 0.50.0 lt; slt; the volume is 0.5 to 0.05 lt; plt; the volume of the catalyst is 0.50.001 lt; xlt; the invention relates to a method for preparing a high-purity magnesium alloy. (t + a + m) lt; 1.0115750.9889 lt, tlt; 1.0003750.00010 lt, a < lt >; the method comprises the following steps: (1) carrying out heat preservation; mlt; mlt; the content of the compound is 0.01 to 0.0001 lt; zlt, zlt; 0.01, to a method for producing a corresponding PTC semiconductor ceramic, to the use of a PTC semiconductor ceramic, and to a heating device having a PTC semiconductor ceramic.
本发明涉及一种用于半导体陶瓷组成成分,其中,所述半导体陶瓷组成成分具有根据下述分子式的基于BaTiO3的化合物作为主要组分[BabCacSrsPbpRx][TitAaMnm]O3+z,其中,R是从由Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb组成的组中选择的至少一个元素,其中,A是从V、Nb和Ta的组中选择的至少一个元素,其中,以如下方式限定变量b、c、s、p、x、t、a、m和z:b=1–c–s–p–x0<0.510.490
<(t+a+m)<1.0115750.9889
Positive temperature coefficient (PTC) semiconductor ceramic composition, method for producing semiconductor ceramic, heating device and use
The invention relates to a composition for a semiconductor ceramic, said composition having, as a main component, a BaTiO3-based compound according to the following molecular formula: [BabCacSrsPbpRx] [TitAaMnm] O3 + z, where R is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, where A is at least one element selected from the group consisting of V, Nb and Ta, where z is at least one element selected from the group consisting of V, Nb and Ta. The variables b, c, s, p, x, t, a, m and z are defined in the following manner: b = 1-c-s-p-x0lt; c + s + plt; the method comprises the following steps of: obtaining 0.510.490 Blt; 0.9999. 0 lt, 0.9999. 0 lt; clt; ct; 0.50.0 lt, 0.50.0 lt; slt; the volume is 0.5 to 0.05 lt; plt; the volume of the catalyst is 0.50.001 lt; xlt; the invention relates to a method for preparing a high-purity magnesium alloy. (t + a + m) lt; 1.0115750.9889 lt, tlt; 1.0003750.00010 lt, a < lt >; the method comprises the following steps: (1) carrying out heat preservation; mlt; mlt; the content of the compound is 0.01 to 0.0001 lt; zlt, zlt; 0.01, to a method for producing a corresponding PTC semiconductor ceramic, to the use of a PTC semiconductor ceramic, and to a heating device having a PTC semiconductor ceramic.
本发明涉及一种用于半导体陶瓷组成成分,其中,所述半导体陶瓷组成成分具有根据下述分子式的基于BaTiO3的化合物作为主要组分[BabCacSrsPbpRx][TitAaMnm]O3+z,其中,R是从由Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb组成的组中选择的至少一个元素,其中,A是从V、Nb和Ta的组中选择的至少一个元素,其中,以如下方式限定变量b、c、s、p、x、t、a、m和z:b=1–c–s–p–x0<0.510.490
<(t+a+m)<1.0115750.9889
Positive temperature coefficient (PTC) semiconductor ceramic composition, method for producing semiconductor ceramic, heating device and use
PTC半导体陶瓷组成成分、用于制造半导体陶瓷的方法以及加热设备和应用
ANGERMANN HANS-HEINRICH (author) / WINTRICH KLAUS (author) / SEIFERT THOMAS (author)
2025-01-14
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
/
F27D
Einzelheiten oder Zubehör für Industrieöfen, Schachtöfen, Brennöfen oder Retorten, soweit sie nicht auf eine Ofenart eingeschränkt sind
,
DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
/
G01K
MEASURING TEMPERATURE
,
Messen der Temperatur
/
H01C
Widerstände
,
RESISTORS
/
H01M
Verfahren oder Mittel, z.B. Batterien, für die direkte Umwandlung von chemischer in elektrische Energie
,
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
SEMICONDUCTOR CERAMIC AND POSITIVE TEMPERATURE COEFFICIENT THERMISTOR
European Patent Office | 2018
|SEMICONDUCTOR CERAMIC AND POSITIVE TEMPERATURE COEFFICIENT THERMISTOR
European Patent Office | 2018
|European Patent Office | 2025
|European Patent Office | 2015
|