A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
TAILORING HOLES CARRIER CONCENTRATION IN CUXCRYO2
The first object of the invention is directed to a method for modulating the number of charge carriers p in CuxCryO2, the method comprising the steps of (a) depositing a film of CuxCryO2 on a substrate; and (b) annealing at a temperature T the film of deposited CuxCryO2, wherein the subscripts x and y are positive numbers whose the sum is equal or inferior to 2. The method is remarkable in that the log (p)=α T2+β T+γ, wherein the temperature T is expressed degree Celsius, wherein α is a first parameter ranging from −0.00011 to −0.009, wherein β is a second parameter ranging from +0.12 to +0.14, and wherein γ is a third parameter ranging from −27.40 to −22.42. The second object of the invention is directed to a semiconductor comprising CuxCryO2 deposited on a substrate and obtainable by the method in accordance with the first object of the invention.
TAILORING HOLES CARRIER CONCENTRATION IN CUXCRYO2
The first object of the invention is directed to a method for modulating the number of charge carriers p in CuxCryO2, the method comprising the steps of (a) depositing a film of CuxCryO2 on a substrate; and (b) annealing at a temperature T the film of deposited CuxCryO2, wherein the subscripts x and y are positive numbers whose the sum is equal or inferior to 2. The method is remarkable in that the log (p)=α T2+β T+γ, wherein the temperature T is expressed degree Celsius, wherein α is a first parameter ranging from −0.00011 to −0.009, wherein β is a second parameter ranging from +0.12 to +0.14, and wherein γ is a third parameter ranging from −27.40 to −22.42. The second object of the invention is directed to a semiconductor comprising CuxCryO2 deposited on a substrate and obtainable by the method in accordance with the first object of the invention.
TAILORING HOLES CARRIER CONCENTRATION IN CUXCRYO2
ANPASSUNG DER LOCHTRÄGERKONZENTRATION IN CUXCRYO2
ADAPTATION DE LA CONCENTRATION DE TRANSPORT DE TROUS DANS CUXCRYO2
LENOBLE DAMIEN (author) / ANTUNES AFONSO JOAO RICARDO (author) / CREPELLIERE JONATHAN (author) / LUNCA POPA PETRU (author)
2020-08-05
Patent
Electronic Resource
English
Stress concentration around holes
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