A platform for research: civil engineering, architecture and urbanism
IN-SITU SOLID CHEMICAL VAPOR DEPOSITION PRECURSOR DELIVERY
A chemical vapor deposition system (20) comprises a reactor (12) including at least one wall (20) extending between an inlet end (16) and an outlet end (18), and an internal volume (22) defined by the at least one wall (20), the inlet end (16), and the outlet end (18). The reactor (12) further comprises a heat source (14) in thermal communication with the internal volume (22), and a solid precursor container (24) removably placed within the internal volume (22). The solid precursor container (24) includes at least one internal cavity for holding an amount of the solid precursor (24), and an opening fluidly connecting the at least one internal cavity to the internal volume (22) of the reactor (12). The solid precursor (26) comprises at least one of aluminum, zirconium, hafnium, and a rare earth metallic element.
IN-SITU SOLID CHEMICAL VAPOR DEPOSITION PRECURSOR DELIVERY
A chemical vapor deposition system (20) comprises a reactor (12) including at least one wall (20) extending between an inlet end (16) and an outlet end (18), and an internal volume (22) defined by the at least one wall (20), the inlet end (16), and the outlet end (18). The reactor (12) further comprises a heat source (14) in thermal communication with the internal volume (22), and a solid precursor container (24) removably placed within the internal volume (22). The solid precursor container (24) includes at least one internal cavity for holding an amount of the solid precursor (24), and an opening fluidly connecting the at least one internal cavity to the internal volume (22) of the reactor (12). The solid precursor (26) comprises at least one of aluminum, zirconium, hafnium, and a rare earth metallic element.
IN-SITU SOLID CHEMICAL VAPOR DEPOSITION PRECURSOR DELIVERY
IN-SITU-ZUFÜHRUNG EINES FESTEN CHEMISCHEN DAMPFABLAGERUNGSVORLÄUFERS
ADMINISTRATION IN SITU DE PRÉCURSEUR DE DÉPÔT CHIMIQUE EN PHASE VAPEUR SOLIDE
NABLE JUN (author) / SHE YING (author) / SUDRE OLIVIER H (author)
2024-02-28
Patent
Electronic Resource
English
British Library Online Contents | 1998
|British Library Online Contents | 2015
|Mineral precursor for chemical vapor deposition of Rh metallic films
British Library Online Contents | 1993
|Precursor development for the chemical vapor deposition of aluminium, copper and palladium
British Library Online Contents | 1996
|Reaction mechanism of a lanthanum precursor in liquid source metalorganic chemical vapor deposition
British Library Online Contents | 2005
|