A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
HIGHLY THERMALLY CONDUCTIVE SILICON NITRIDE SINTERED COMPACT, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
The highly thermally conductive silicon nitride sintered compact according to an embodiment comprises silicon nitride crystal grains and a grain boundary phase. The silicon nitride sintered compact has a heat conductivity of 80 W/(m·K) or more. The average value of solute oxygen levels in the silicon nitride crystal grains present in a unit surface area of 20 µm × 20 µm in an arbitrary cross-sectional surface is 0.2 wt% or less. The average value of major axis diameters of the silicon nitride crystal grains present in a unit surface area of 50 µm × 50 µm in an arbitrary cross-sectional surface is 1 to 10 µm inclusive. The average value of aspect ratios of the silicon nitride crystal grains present in the unit surface area of 50 µm × 50 µm is 2 to 10 inclusive.
HIGHLY THERMALLY CONDUCTIVE SILICON NITRIDE SINTERED COMPACT, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
The highly thermally conductive silicon nitride sintered compact according to an embodiment comprises silicon nitride crystal grains and a grain boundary phase. The silicon nitride sintered compact has a heat conductivity of 80 W/(m·K) or more. The average value of solute oxygen levels in the silicon nitride crystal grains present in a unit surface area of 20 µm × 20 µm in an arbitrary cross-sectional surface is 0.2 wt% or less. The average value of major axis diameters of the silicon nitride crystal grains present in a unit surface area of 50 µm × 50 µm in an arbitrary cross-sectional surface is 1 to 10 µm inclusive. The average value of aspect ratios of the silicon nitride crystal grains present in the unit surface area of 50 µm × 50 µm is 2 to 10 inclusive.
HIGHLY THERMALLY CONDUCTIVE SILICON NITRIDE SINTERED COMPACT, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
SILICIUMNITRIDSINTERKÖRPER HOHER WÄRMELEITFÄHIGKEIT, SILICIUMNITRIDSUBSTRAT, SILICIUMNITRIDLEITERPLATTE UND HALBLEITERBAUELEMENT
COMPRIMÉ FRITTÉ DE NITRURE DE SILICIUM HAUTEMENT THERMOCONDUCTEUR, SUBSTRAT EN NITRURE DE SILICIUM, CARTE DE CIRCUIT IMPRIMÉ AU NITRURE DE SILICIUM ET DISPOSITIF À SEMI-CONDUCTEUR
AOKI KATSUYUKI (author) / GOTO YASUHIRO (author) / IWAI KENTARO (author) / FUKASAWA TAKAYUKI (author) / YAMAGATA YOSHIHITO (author)
2024-07-10
Patent
Electronic Resource
English
| European Patent Office | 2023
| European Patent Office | 2024
| European Patent Office | 2024
Silicon Nitride Sintered Body, Silicon Nitride Substrate, And Silicon Nitride Circuit Board
| European Patent Office | 2021
Silicon nitride sintered body, silicon nitride substrate, and silicon nitride circuit board
| European Patent Office | 2025