A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
NON-LEAD DIELECTRIC THIN FILM, COMPOSITION FOR FORMING THIS FILM, AND METHOD FOR FORMING THIS FILM
PROBLEM TO BE SOLVED: To provide a non-lead dielectric thin film free from lead, and having high crystal orientation and high relative dielectric constant.SOLUTION: A non-lead dielectric thin film is controlled in (111) orientation by including at least two components of a component of BaTiO, a component of Bi(MgTi)Oand a component of BiFeO, or controlled in (100) orientation by including at least two components of a component of BaTiO, a component of Bi(MgTi)Oand a component of BiFeO. The non-lead dielectric thin film is formed on (111)SrRuOor on (100)LaNiO.
【課題】鉛フリーで、高い結晶配向性と高い比誘電率を有する非鉛誘電体薄膜を提供する。【解決手段】ＢａＴｉＯ3の成分、Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3の成分及びＢｉＦｅＯ3の成分のうち少なくとも２成分を含有して（１１１）配向に制御されるか、又はＢａＴｉＯ3の成分、Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3の成分及びＢｉＦｅＯ3の成分のうち少なくとも２成分を含有して（１００）配向に制御された非鉛誘電体薄膜である。この非鉛誘電体薄膜は（１１１）ＳｒＲｕＯ3上又は（１００）ＬａＮｉＯ3上に形成される。【選択図】図２
NON-LEAD DIELECTRIC THIN FILM, COMPOSITION FOR FORMING THIS FILM, AND METHOD FOR FORMING THIS FILM
PROBLEM TO BE SOLVED: To provide a non-lead dielectric thin film free from lead, and having high crystal orientation and high relative dielectric constant.SOLUTION: A non-lead dielectric thin film is controlled in (111) orientation by including at least two components of a component of BaTiO, a component of Bi(MgTi)Oand a component of BiFeO, or controlled in (100) orientation by including at least two components of a component of BaTiO, a component of Bi(MgTi)Oand a component of BiFeO. The non-lead dielectric thin film is formed on (111)SrRuOor on (100)LaNiO.
【課題】鉛フリーで、高い結晶配向性と高い比誘電率を有する非鉛誘電体薄膜を提供する。【解決手段】ＢａＴｉＯ3の成分、Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3の成分及びＢｉＦｅＯ3の成分のうち少なくとも２成分を含有して（１１１）配向に制御されるか、又はＢａＴｉＯ3の成分、Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3の成分及びＢｉＦｅＯ3の成分のうち少なくとも２成分を含有して（１００）配向に制御された非鉛誘電体薄膜である。この非鉛誘電体薄膜は（１１１）ＳｒＲｕＯ3上又は（１００）ＬａＮｉＯ3上に形成される。【選択図】図２
NON-LEAD DIELECTRIC THIN FILM, COMPOSITION FOR FORMING THIS FILM, AND METHOD FOR FORMING THIS FILM
非鉛誘電体薄膜及びこの薄膜形成用組成物並びにこの薄膜の形成方法
SAKURAI HIDEAKI (author) / FUJII JUN (author) / SOYAMA NOBUYUKI (author) / FUNAKUBO HIROSHI (author) / SHIMIZU TAKAO (author) / KIMURA JUNICHI (author)
2015-06-11
Patent
Electronic Resource
Japanese
IPC:
C30B
SINGLE-CRYSTAL GROWTH
,
Züchten von Einkristallen
/
C01G
Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle
,
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
/
C04B
Kalk
,
LIME
/
H01B
CABLES
,
Kabel
/
H01G
Kondensatoren
,
CAPACITORS
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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