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LIQUID COMPOSITION FOR FORMING LEAD-FREE DIELECTRIC THIN FILM AND METHOD OF FORMING THE THIN FILM, AND LEAD-FREE DIELECTRIC THIN FILM FORMED BY THE METHOD
PROBLEM TO BE SOLVED: To provide a liquid composition for forming a lead-free dielectric thin film having high dielectric constant by a chemical solution deposition method.SOLUTION: The liquid composition for forming a lead-free dielectric thin film is a liquid composition for forming a lead-free dielectric thin film by a chemical solution deposition method and contains at least two of a BaTiOcontent, a Bi(MgTi)Ocontent and a BiFeOcontent and is a composition in a first area surrounded by x=0.90 y=0.10, x=0.30 z=0.70, x=0.15 y=0.10 z=0.75 and x=0.30 y=0.70 in a ternary phase diagram of [BaTiO] [Bi(MgTi)O] [BiFeO] where x[BaTiO] y[Bi(MgTi)O] z[BiFeO] and x+y+z=1.
【課題】鉛フリーで、高い比誘電率を有する非鉛誘電体薄膜を化学溶液堆積法により形成するための液組成物を提供する。【解決手段】本発明の非鉛誘電体薄膜形成用液組成物は、ＢａＴｉＯ3の成分、Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3の成分及びＢｉＦｅＯ3成分のうち少なくとも２成分を含有し、ｘ[ＢａＴｉＯ3]・ｙ[Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3]・ｚ[ＢｉＦｅＯ3]、かつｘ＋ｙ＋ｚ＝１とするとき、[ＢａＴｉＯ3]・[Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3]・[ＢｉＦｅＯ3]の三元相図上で、ｘ＝０．９０・ｙ＝０．１０と、ｘ＝０．３０・ｚ＝０．７０と、ｘ＝０．１５・ｙ＝０．１０・ｚ＝０．７５と、ｘ＝０．３０・ｙ＝０．７０とで囲まれた第１領域内の組成である、非鉛誘電体薄膜を化学溶液堆積法により形成するための液組成物である。【選択図】図１
LIQUID COMPOSITION FOR FORMING LEAD-FREE DIELECTRIC THIN FILM AND METHOD OF FORMING THE THIN FILM, AND LEAD-FREE DIELECTRIC THIN FILM FORMED BY THE METHOD
PROBLEM TO BE SOLVED: To provide a liquid composition for forming a lead-free dielectric thin film having high dielectric constant by a chemical solution deposition method.SOLUTION: The liquid composition for forming a lead-free dielectric thin film is a liquid composition for forming a lead-free dielectric thin film by a chemical solution deposition method and contains at least two of a BaTiOcontent, a Bi(MgTi)Ocontent and a BiFeOcontent and is a composition in a first area surrounded by x=0.90 y=0.10, x=0.30 z=0.70, x=0.15 y=0.10 z=0.75 and x=0.30 y=0.70 in a ternary phase diagram of [BaTiO] [Bi(MgTi)O] [BiFeO] where x[BaTiO] y[Bi(MgTi)O] z[BiFeO] and x+y+z=1.
【課題】鉛フリーで、高い比誘電率を有する非鉛誘電体薄膜を化学溶液堆積法により形成するための液組成物を提供する。【解決手段】本発明の非鉛誘電体薄膜形成用液組成物は、ＢａＴｉＯ3の成分、Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3の成分及びＢｉＦｅＯ3成分のうち少なくとも２成分を含有し、ｘ[ＢａＴｉＯ3]・ｙ[Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3]・ｚ[ＢｉＦｅＯ3]、かつｘ＋ｙ＋ｚ＝１とするとき、[ＢａＴｉＯ3]・[Ｂｉ(Ｍｇ0.5Ｔｉ0.5)Ｏ3]・[ＢｉＦｅＯ3]の三元相図上で、ｘ＝０．９０・ｙ＝０．１０と、ｘ＝０．３０・ｚ＝０．７０と、ｘ＝０．１５・ｙ＝０．１０・ｚ＝０．７５と、ｘ＝０．３０・ｙ＝０．７０とで囲まれた第１領域内の組成である、非鉛誘電体薄膜を化学溶液堆積法により形成するための液組成物である。【選択図】図１
LIQUID COMPOSITION FOR FORMING LEAD-FREE DIELECTRIC THIN FILM AND METHOD OF FORMING THE THIN FILM, AND LEAD-FREE DIELECTRIC THIN FILM FORMED BY THE METHOD
非鉛誘電体薄膜形成用液組成物及びその薄膜の形成方法並びにその方法で形成された非鉛誘電体薄膜
SAKURAI HIDEAKI (author) / FUJII JUN (author) / SOYAMA NOBUYUKI (author) / FUNAKUBO HIROSHI (author) / SHIMIZU TAKAO (author) / KIMURA JUNICHI (author)
2015-06-11
Patent
Electronic Resource
Japanese
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