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SILICON CARBIDE JOINED BODY AND PRODUCTION METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a silicon carbide joined body which enables the residual stress thereof to be reduced.SOLUTION: A silicon carbide joined body 20 is provided in which base metal layers 21 and 22 composed of silicon carbide sintered compact are joined together through a joining layer 23 composed of silicon carbide. The joining layer 23 has a thickness of 35-55 μm, a pore ratio of 10-20%, and a mean pore size of 0.1-7.0 μm. The joining layer 23 having a thickness of 35-55 μm, a pore ratio of 10-20%, and a mean pore size of 0.1-7.0 μm is formed by inserting a joining sheet 13 having a thickness of 50-130 μm and containing silicon carbide and a binder as a joining material between silicon carbide sintered compacts 11 and 12, and heat-treating the joining sheet 13 and the silicon carbide sintered compacts 11 and 12 while pressurizing them.
【課題】炭化珪素接合体の残留応力を小さく図ることが可能な炭化珪素接合体を提供する。【解決手段】炭化珪素接合体20は、炭化珪素焼結体からなる母材層21,22が炭化珪素からなる接合層23を介して接合されている。接合層23は、厚さが35〜55μm、気孔割合が10〜20%、平均気孔径が0.1〜7.0μmである。炭化珪素焼結体11,12の間に、厚さが50〜130μmであり、炭化珪素及び結合材としてバインダを含みなる接合シート13を挟み込み、加圧しながら熱処理して、厚さが35〜55μm、気孔割合が10〜20%、平均気孔径が0.1〜7.0μmである接合層23を形成する。【選択図】図1
SILICON CARBIDE JOINED BODY AND PRODUCTION METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a silicon carbide joined body which enables the residual stress thereof to be reduced.SOLUTION: A silicon carbide joined body 20 is provided in which base metal layers 21 and 22 composed of silicon carbide sintered compact are joined together through a joining layer 23 composed of silicon carbide. The joining layer 23 has a thickness of 35-55 μm, a pore ratio of 10-20%, and a mean pore size of 0.1-7.0 μm. The joining layer 23 having a thickness of 35-55 μm, a pore ratio of 10-20%, and a mean pore size of 0.1-7.0 μm is formed by inserting a joining sheet 13 having a thickness of 50-130 μm and containing silicon carbide and a binder as a joining material between silicon carbide sintered compacts 11 and 12, and heat-treating the joining sheet 13 and the silicon carbide sintered compacts 11 and 12 while pressurizing them.
【課題】炭化珪素接合体の残留応力を小さく図ることが可能な炭化珪素接合体を提供する。【解決手段】炭化珪素接合体20は、炭化珪素焼結体からなる母材層21,22が炭化珪素からなる接合層23を介して接合されている。接合層23は、厚さが35〜55μm、気孔割合が10〜20%、平均気孔径が0.1〜7.0μmである。炭化珪素焼結体11,12の間に、厚さが50〜130μmであり、炭化珪素及び結合材としてバインダを含みなる接合シート13を挟み込み、加圧しながら熱処理して、厚さが35〜55μm、気孔割合が10〜20%、平均気孔径が0.1〜7.0μmである接合層23を形成する。【選択図】図1
SILICON CARBIDE JOINED BODY AND PRODUCTION METHOD THEREOF
炭化珪素接合体及びその製造方法
UMETSU MOTOHIRO (author) / HAYASAKA AI (author)
2015-07-06
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
European Patent Office | 2015
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