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MATERIAL FOR SINTER BONDING, ELECTRONIC MEMBER EQUIPPED WITH MATERIAL FOR SINTER BONDING, AND SEMICONDUCTOR MODULE
PROBLEM TO BE SOLVED: To provide a material for sinter bonding having a thick-film copper oxide layer which is excellent in handleability and bondability, and also to provide an electronic member equipped with the material for sinter bonding.SOLUTION: A material for sinter bonding has a base material 1 and a copper oxide layer 3 provided on at least one surface of the base material 1. The copper oxide layer 3 is constituted of copper oxide particles whose average grain diameter is 100 nm or more and 50 μm or less and thickness of the copper oxide layers is 20 μm or more and 100 μm or less. On the interface between the base material 1 and the copper oxide layer 3, a part of the oxide copper particles is buried in the base material.SELECTED DRAWING: Figure 2
【課題】取り扱い性、接合性に優れた厚膜の酸化銅層を有する焼結接合用材料、焼結接合用材料を備えた電子部材を提供する。【解決手段】基材1と基材1の少なくとも一方の面に設けられた酸化銅層3を有し、酸化銅層3は、平均粒径が100nm以上50μm以下の酸化銅粒子2で構成され、酸化銅層の厚さが20μm以上100μm以下であり、基材1と酸化銅層3の界面において、酸化銅粒子の一部が基材に埋め込まれている焼結接合用材料を特徴とする。【選択図】図2
MATERIAL FOR SINTER BONDING, ELECTRONIC MEMBER EQUIPPED WITH MATERIAL FOR SINTER BONDING, AND SEMICONDUCTOR MODULE
PROBLEM TO BE SOLVED: To provide a material for sinter bonding having a thick-film copper oxide layer which is excellent in handleability and bondability, and also to provide an electronic member equipped with the material for sinter bonding.SOLUTION: A material for sinter bonding has a base material 1 and a copper oxide layer 3 provided on at least one surface of the base material 1. The copper oxide layer 3 is constituted of copper oxide particles whose average grain diameter is 100 nm or more and 50 μm or less and thickness of the copper oxide layers is 20 μm or more and 100 μm or less. On the interface between the base material 1 and the copper oxide layer 3, a part of the oxide copper particles is buried in the base material.SELECTED DRAWING: Figure 2
【課題】取り扱い性、接合性に優れた厚膜の酸化銅層を有する焼結接合用材料、焼結接合用材料を備えた電子部材を提供する。【解決手段】基材1と基材1の少なくとも一方の面に設けられた酸化銅層3を有し、酸化銅層3は、平均粒径が100nm以上50μm以下の酸化銅粒子2で構成され、酸化銅層の厚さが20μm以上100μm以下であり、基材1と酸化銅層3の界面において、酸化銅粒子の一部が基材に埋め込まれている焼結接合用材料を特徴とする。【選択図】図2
MATERIAL FOR SINTER BONDING, ELECTRONIC MEMBER EQUIPPED WITH MATERIAL FOR SINTER BONDING, AND SEMICONDUCTOR MODULE
焼結接合用材料、焼結接合用材料を備えた電子部材、及び、半導体モジュール
YASUDA YUSUKE (author) / MORITA TOSHIAKI (author) / KIKUCHI SHIGERU (author)
2016-03-22
Patent
Electronic Resource
Japanese
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