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A platform for research: civil engineering, architecture and urbanism
SILICON CARBIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME
PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact which has good plasma resistance and can be subjected to electrical discharge machining.SOLUTION: There is provided a method for producing a silicon carbide sintered compact which comprises: a first step 1 of reacting a carbon source and a silicon source to obtain a silicon carbide powder containing β-type silicon carbide; a second step 2 of treating the silicon carbide powder obtained in the first step at 2200 to 2300°C to change a part of the β-type silicon carbide to α-type silicon carbide and obtain a silicon carbide powder containing the α-type silicon carbide and the β-type silicon carbide in a prescribed ratio of 65 to 85 wt.% of the α-type silicon carbide and 15 to 35 wt.% of the β-type silicon carbide; a third step 3 of pulverizing the silicon carbide powder obtained in the second step; and a fourth step 4 of sintering the silicon carbide powder obtained in the third step to obtain a silicon carbide sintered compact having an electric resistivity of less than 1 Ω cm.SELECTED DRAWING: Figure 1
【課題】プラズマ耐性が良好であり、かつ放電加工が可能な炭化ケイ素焼結体を提供する。【解決手段】炭化ケイ素焼結体の製造方法が、炭素源とケイ素源を反応させ、β型炭化ケイ素を含む炭化ケイ素粉体を得る第１工程１と、第１工程１で得た炭化ケイ素粉体を２２００〜２３００℃で処理し、前記β型炭化ケイ素の一部をα型炭化ケイ素に変化させ、α型炭化ケイ素とβ型炭化ケイ素とをα型炭化ケイ素６５〜８５ｗｔ％とβ型炭化ケイ素１５〜３５ｗｔ％との所定の割合で含む炭化ケイ素粉体を得る第２工程２と、第２工程２で得た炭化ケイ素粉体を粉砕する第３工程３と、第３工程３で得た炭化ケイ素粉体を焼結して炭化ケイ素焼結体を得る第４工程４とを含む方法で製造された電気抵抗率が１Ω・ｃｍ未満の炭化ケイ素焼結体。【選択図】図１
SILICON CARBIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME
PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact which has good plasma resistance and can be subjected to electrical discharge machining.SOLUTION: There is provided a method for producing a silicon carbide sintered compact which comprises: a first step 1 of reacting a carbon source and a silicon source to obtain a silicon carbide powder containing β-type silicon carbide; a second step 2 of treating the silicon carbide powder obtained in the first step at 2200 to 2300°C to change a part of the β-type silicon carbide to α-type silicon carbide and obtain a silicon carbide powder containing the α-type silicon carbide and the β-type silicon carbide in a prescribed ratio of 65 to 85 wt.% of the α-type silicon carbide and 15 to 35 wt.% of the β-type silicon carbide; a third step 3 of pulverizing the silicon carbide powder obtained in the second step; and a fourth step 4 of sintering the silicon carbide powder obtained in the third step to obtain a silicon carbide sintered compact having an electric resistivity of less than 1 Ω cm.SELECTED DRAWING: Figure 1
【課題】プラズマ耐性が良好であり、かつ放電加工が可能な炭化ケイ素焼結体を提供する。【解決手段】炭化ケイ素焼結体の製造方法が、炭素源とケイ素源を反応させ、β型炭化ケイ素を含む炭化ケイ素粉体を得る第１工程１と、第１工程１で得た炭化ケイ素粉体を２２００〜２３００℃で処理し、前記β型炭化ケイ素の一部をα型炭化ケイ素に変化させ、α型炭化ケイ素とβ型炭化ケイ素とをα型炭化ケイ素６５〜８５ｗｔ％とβ型炭化ケイ素１５〜３５ｗｔ％との所定の割合で含む炭化ケイ素粉体を得る第２工程２と、第２工程２で得た炭化ケイ素粉体を粉砕する第３工程３と、第３工程３で得た炭化ケイ素粉体を焼結して炭化ケイ素焼結体を得る第４工程４とを含む方法で製造された電気抵抗率が１Ω・ｃｍ未満の炭化ケイ素焼結体。【選択図】図１
SILICON CARBIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME
炭化ケイ素焼結体及びその製造方法
ODAKA FUMIO (author)
2016-09-01
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
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