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SINTERED BODY FOR ZnO-MgO-BASED SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide a ZnO-MgO-based sputtering target capable of stably forming a film at high speed, a sintered body for manufacturing a target and a manufacturing method of the sintered body.SOLUTION: There is provided a ZnO-MgO-based sintered body containing Mg of 3 to 50 mol% in terms of MgO and the balance ZnO with inevitable impurities and satisfying 0.01≤I1/I2≤1.00, where I1 is peak strength of the MgO phase in the ZnO-MgO sintered body and I2 is peak strength of the MgO phase in a mixed powder of a ZnO powder and a MgO powder (having random directions respectively) with a ratio equal to a ratio of Mg and Zn in the sintered body in an X ray diffraction peak.SELECTED DRAWING: None
【課題】高速かつ安定した成膜が可能なＺｎＯ−ＭｇＯ系スパッタリングターゲット、ターゲットを作製するための焼結体、及び、焼結体の製造方法の提供。【解決手段】ＭｇをＭｇＯ換算で３〜５０ｍｏｌ％含有し、残部がＺｎＯ及び不可避的不純物からなり、Ｘ線回折ピークにおいて、ＺｎＯ−ＭｇＯ焼結体でのＭｇＯ相のピーク強度をＩ１とし、焼結体中のＭｇとＺｎの比と同等の比となるＺｎＯ粉とＭｇＯ粉の混合粉（いずれもランダム方位を持つ）でのＭｇＯ相のピーク強度をＩ２とした場合、０．０１≦Ｉ１／Ｉ２≦１．００を満たすＺｎＯ−ＭｇＯ系焼結体。【選択図】なし
SINTERED BODY FOR ZnO-MgO-BASED SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide a ZnO-MgO-based sputtering target capable of stably forming a film at high speed, a sintered body for manufacturing a target and a manufacturing method of the sintered body.SOLUTION: There is provided a ZnO-MgO-based sintered body containing Mg of 3 to 50 mol% in terms of MgO and the balance ZnO with inevitable impurities and satisfying 0.01≤I1/I2≤1.00, where I1 is peak strength of the MgO phase in the ZnO-MgO sintered body and I2 is peak strength of the MgO phase in a mixed powder of a ZnO powder and a MgO powder (having random directions respectively) with a ratio equal to a ratio of Mg and Zn in the sintered body in an X ray diffraction peak.SELECTED DRAWING: None
【課題】高速かつ安定した成膜が可能なＺｎＯ−ＭｇＯ系スパッタリングターゲット、ターゲットを作製するための焼結体、及び、焼結体の製造方法の提供。【解決手段】ＭｇをＭｇＯ換算で３〜５０ｍｏｌ％含有し、残部がＺｎＯ及び不可避的不純物からなり、Ｘ線回折ピークにおいて、ＺｎＯ−ＭｇＯ焼結体でのＭｇＯ相のピーク強度をＩ１とし、焼結体中のＭｇとＺｎの比と同等の比となるＺｎＯ粉とＭｇＯ粉の混合粉（いずれもランダム方位を持つ）でのＭｇＯ相のピーク強度をＩ２とした場合、０．０１≦Ｉ１／Ｉ２≦１．００を満たすＺｎＯ−ＭｇＯ系焼結体。【選択図】なし
SINTERED BODY FOR ZnO-MgO-BASED SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR
ＺｎＯ−ＭｇＯ系スパッタリングターゲット用焼結体及びその製造方法
KOIDO YOSHIMASA (author)
2016-11-10
Patent
Electronic Resource
Japanese
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