A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
HEATING ELEMENT AND METHOD FOR MANUFACTURING HEATING ELEMENT
PROBLEM TO BE SOLVED: To provide a heating element which is high in purity, has excellent heat resistance and strength characteristics, and also is excellent in insulation properties.SOLUTION: A heating element 1 includes an SiC intermediate layer 5 and an SiC outer layer 6, in order, on an SiC base material 4 having a resistivity of 0.005-10 Ω cm, the SiC intermediate layer having a resistivity of more than 10,000 Ω cm and equal to or less than 1,000,000 Ω cm and a thickness of 25-100 μm, and the SiC outer layer having a resistivity of more than 10 Ω cm and equal to or less than 10,000 Ω cm, a thickness of 25-100 μm, and a total impurity amount of equal to or less than 5 mass ppm.SELECTED DRAWING: Figure 3
【課題】高純度で優れた耐熱性や強度特性を有するとともに、絶縁性に優れた発熱体エレメントを提供する。【解決手段】発熱体エレメント１は、抵抗率が０．００５Ω・ｃｍ〜１０Ω・ｃｍであるＳｉＣ基材４上に、抵抗率が１０，０００Ω・ｃｍを超え１，０００，０００Ω・ｃｍ以下であり、厚さが２５μｍ〜１００μｍであるＳｉＣ中間層５と、抵抗率が１０Ω・ｃｍを超え１０，０００Ω・ｃｍ以下であり、厚さが２５μｍ〜１００μｍである不純物量総量が５質量ｐｐｍ以下のＳｉＣ外層６とを順次有する。【選択図】図３
HEATING ELEMENT AND METHOD FOR MANUFACTURING HEATING ELEMENT
PROBLEM TO BE SOLVED: To provide a heating element which is high in purity, has excellent heat resistance and strength characteristics, and also is excellent in insulation properties.SOLUTION: A heating element 1 includes an SiC intermediate layer 5 and an SiC outer layer 6, in order, on an SiC base material 4 having a resistivity of 0.005-10 Ω cm, the SiC intermediate layer having a resistivity of more than 10,000 Ω cm and equal to or less than 1,000,000 Ω cm and a thickness of 25-100 μm, and the SiC outer layer having a resistivity of more than 10 Ω cm and equal to or less than 10,000 Ω cm, a thickness of 25-100 μm, and a total impurity amount of equal to or less than 5 mass ppm.SELECTED DRAWING: Figure 3
【課題】高純度で優れた耐熱性や強度特性を有するとともに、絶縁性に優れた発熱体エレメントを提供する。【解決手段】発熱体エレメント１は、抵抗率が０．００５Ω・ｃｍ〜１０Ω・ｃｍであるＳｉＣ基材４上に、抵抗率が１０，０００Ω・ｃｍを超え１，０００，０００Ω・ｃｍ以下であり、厚さが２５μｍ〜１００μｍであるＳｉＣ中間層５と、抵抗率が１０Ω・ｃｍを超え１０，０００Ω・ｃｍ以下であり、厚さが２５μｍ〜１００μｍである不純物量総量が５質量ｐｐｍ以下のＳｉＣ外層６とを順次有する。【選択図】図３
HEATING ELEMENT AND METHOD FOR MANUFACTURING HEATING ELEMENT
発熱体エレメントおよび発熱体エレメントの製造方法
SUGIHARA TAKAOMI (author) / NAKAMURA SHOHEI (author) / SHODA TEPPEI (author)
2017-03-09
Patent
Electronic Resource
Japanese
Heating element, method for preparing heating element and heating device
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