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ALUMINUM NITRIDE SUBSTRATE, PART FOR SEMICONDUCTOR MANUFACTURING, CVD HEATER, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE
PROBLEM TO BE SOLVED: To provide: an aluminum nitride substrate which enables the suppression of occurrence of the warp or warpage of an aluminum nitride substrate even in the case of using no restraining sheet; a part for semiconductor manufacturing, a CVD heater, and a method for manufacturing an aluminum nitride substrate.SOLUTION: An aluminum nitride substrate 1 is composed of a sintered compact including aluminum nitride, and an auxiliary component including at least rare earth element of a rare earth element and an alkali-earth metal. The aluminum nitride substrate 1 comprises: laminates 15 and 17 each including two or more kinds of layers different in composition, which are stacked in a thickness direction of the aluminum nitride substrate 1.SELECTED DRAWING: Figure 1
【課題】拘束シートを用いない場合でも、窒化アルミニウム基板の反りやうねりの発生を抑制できる、窒化アルミニウム基板、半導体製造用部品、ＣＶＤヒータ、及び窒化アルミニウム基板の製造方法を提供すること。【解決手段】窒化アルミニウム基板１は、窒化アルミニウムと希土類元素及びアルカリ土類金属のうち少なくとも希土類元素を含む補助成分とを含む焼結体によって構成される。この窒化アルミニウム基板１は、組成の異なる２種以上の層からなる積層体１５、１７が、窒化アルミニウム基板１の厚み方向に積層された構成を有する。【選択図】図１
ALUMINUM NITRIDE SUBSTRATE, PART FOR SEMICONDUCTOR MANUFACTURING, CVD HEATER, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE
PROBLEM TO BE SOLVED: To provide: an aluminum nitride substrate which enables the suppression of occurrence of the warp or warpage of an aluminum nitride substrate even in the case of using no restraining sheet; a part for semiconductor manufacturing, a CVD heater, and a method for manufacturing an aluminum nitride substrate.SOLUTION: An aluminum nitride substrate 1 is composed of a sintered compact including aluminum nitride, and an auxiliary component including at least rare earth element of a rare earth element and an alkali-earth metal. The aluminum nitride substrate 1 comprises: laminates 15 and 17 each including two or more kinds of layers different in composition, which are stacked in a thickness direction of the aluminum nitride substrate 1.SELECTED DRAWING: Figure 1
【課題】拘束シートを用いない場合でも、窒化アルミニウム基板の反りやうねりの発生を抑制できる、窒化アルミニウム基板、半導体製造用部品、ＣＶＤヒータ、及び窒化アルミニウム基板の製造方法を提供すること。【解決手段】窒化アルミニウム基板１は、窒化アルミニウムと希土類元素及びアルカリ土類金属のうち少なくとも希土類元素を含む補助成分とを含む焼結体によって構成される。この窒化アルミニウム基板１は、組成の異なる２種以上の層からなる積層体１５、１７が、窒化アルミニウム基板１の厚み方向に積層された構成を有する。【選択図】図１
ALUMINUM NITRIDE SUBSTRATE, PART FOR SEMICONDUCTOR MANUFACTURING, CVD HEATER, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE
窒化アルミニウム基板、半導体製造用部品、ＣＶＤヒータ、及び窒化アルミニウム基板の製造方法
NAKAGAWA HISATO (author) / IWATA MUNEYUKI (author) / IMANISHI YUTAKA (author) / MORIKAWA KAZUKO (author)
2017-08-03
Patent
Electronic Resource
Japanese
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