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A platform for research: civil engineering, architecture and urbanism
METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATE, APPARATUS FOR MANUFACTURING SILICON NITRIDE SUBSTRATE, AND SILICON NITRIDE SUBSTRATE
To provide a method and apparatus for manufacturing a silicon nitride substrate, capable of efficiently manufacturing the silicon nitride substrate by continuous nitriding treatment and stably obtaining a silicon nitride substrate with an improved nitriding ratio.SOLUTION: A method for manufacturing a silicon nitride substrate includes the steps of: carrying in a sheet-shaped compact 50 containing silicon from an inlet of a nitriding furnace 10 having a heating mechanism 13; nitriding the sheet-shaped compact 50 carried into the nitriding furnace 10 under a nitrogen atmosphere while continuously transferring the compact from the inlet to obtain a nitriding treated substrate; carrying out the nitriding treated substrate from an outlet of the nitriding furnace 10; and sintering the nitriding treated substrate to obtain a silicon nitride substrate, wherein an oxygen concentration under a nitrogen atmosphere in nitriding treatment is controlled to 100 ppm or less. An apparatus for manufacturing the silicon nitride substrate is also provided.SELECTED DRAWING: Figure 1
【課題】連続的な窒化処理により効率的な窒化珪素基板の製造を可能とするとともに、窒化率を向上させた窒化珪素基板を安定して得ることができる窒化珪素基板の製造方法および製造装置を提供する。【解決手段】珪素を含むシート状成形体５０を、加熱機構１３を有する窒化処理炉１０の入口から搬入する工程、窒化処理炉１０内に搬入されたシート状成形体５０を、入口から連続的に移送しながら、窒素雰囲気下で窒化させて窒化処理基板を得る工程、窒化処理基板を窒化処理炉１０の出口から搬出する工程、窒化処理基板を焼結して窒化珪素基板とする工程、を備え、窒化処理の窒素雰囲気下における酸素濃度を１００ｐｐｍ以下に制御する窒化珪素基板の製造方法および製造装置。【選択図】図１
METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATE, APPARATUS FOR MANUFACTURING SILICON NITRIDE SUBSTRATE, AND SILICON NITRIDE SUBSTRATE
To provide a method and apparatus for manufacturing a silicon nitride substrate, capable of efficiently manufacturing the silicon nitride substrate by continuous nitriding treatment and stably obtaining a silicon nitride substrate with an improved nitriding ratio.SOLUTION: A method for manufacturing a silicon nitride substrate includes the steps of: carrying in a sheet-shaped compact 50 containing silicon from an inlet of a nitriding furnace 10 having a heating mechanism 13; nitriding the sheet-shaped compact 50 carried into the nitriding furnace 10 under a nitrogen atmosphere while continuously transferring the compact from the inlet to obtain a nitriding treated substrate; carrying out the nitriding treated substrate from an outlet of the nitriding furnace 10; and sintering the nitriding treated substrate to obtain a silicon nitride substrate, wherein an oxygen concentration under a nitrogen atmosphere in nitriding treatment is controlled to 100 ppm or less. An apparatus for manufacturing the silicon nitride substrate is also provided.SELECTED DRAWING: Figure 1
【課題】連続的な窒化処理により効率的な窒化珪素基板の製造を可能とするとともに、窒化率を向上させた窒化珪素基板を安定して得ることができる窒化珪素基板の製造方法および製造装置を提供する。【解決手段】珪素を含むシート状成形体５０を、加熱機構１３を有する窒化処理炉１０の入口から搬入する工程、窒化処理炉１０内に搬入されたシート状成形体５０を、入口から連続的に移送しながら、窒素雰囲気下で窒化させて窒化処理基板を得る工程、窒化処理基板を窒化処理炉１０の出口から搬出する工程、窒化処理基板を焼結して窒化珪素基板とする工程、を備え、窒化処理の窒素雰囲気下における酸素濃度を１００ｐｐｍ以下に制御する窒化珪素基板の製造方法および製造装置。【選択図】図１
METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATE, APPARATUS FOR MANUFACTURING SILICON NITRIDE SUBSTRATE, AND SILICON NITRIDE SUBSTRATE
窒化珪素基板の製造方法、窒化珪素基板の製造装置および窒化珪素基板
SHIMADA KAORU (author) / IMAMURA TOSHIYUKI (author)
2023-10-13
Patent
Electronic Resource
Japanese
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