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A platform for research: civil engineering, architecture and urbanism
NITRIDED SILICON SUBSTRATE AND NITRIDED SILICON CIRCUIT BOARD USING THE SAME
PROBLEM TO BE SOLVED: To provide a nitrided silicon substrate small in variation of insulation property in a thickness direction and capable of providing a circuit board excellent in insulation property and high in credibility when used for the circuit board or the like.SOLUTION: There is provided a nitrogen substrate having more excellent performance by setting thickness T1 of a nitrided silicon substrate having nitrided silicon crystal particles 2 and a particle boundary phase 3 and thermal conductivity of 50 W/m K or more at 0.10 to 0.25 mm, a ratio of total length T2 o the particle boundary phase 3 in the thickness direction to thickness T1 of the nitrided silicon substrate in a cross section structure of the nitrided silicon substrate (T2/T1) at 0.01 to 0.30, variation from average of insulation bearing force when measured by a 4 terminal method with contacting an electrode to front and rear of the substrate at 20% or less, preferably 15% or less and further controlling maximum length of the particle boundary phase 3, average particle diameter of a longer diameter of the nitrided silicon crystal particles 2, pore diameter or the like.SELECTED DRAWING: Figure 2
【課題】厚さ方向における絶縁性のばらつきが小さく、回路基板などに使用した場合に、絶縁性が優れ信頼性が高い回路基板を得ることができる窒化珪素基板の提供。【解決手段】窒化珪素結晶粒子２と粒界相３を具備する熱伝導率が５０Ｗ／ｍ・Ｋ以上の窒化珪素基板において、窒化珪素基板の厚さＴ１が０．１０〜０．２５ｍｍであり、窒化珪素基板の断面組織は、窒化珪素基板の厚さＴ１に対し厚さ方向の粒界相３の合計長さＴ２の比（Ｔ２／Ｔ１）が０．０１〜０．３０であり、基板の表裏に電極を接触して４端子法で測定したときの絶縁耐力の平均値からのばらつきを２０％以下、好ましくは１５％以下とし、更に、粒界相３の最大長、窒化珪素結晶粒子２の長径の平均粒径、及び気孔径等を制御することで、一層優れた性能が得られる窒素基板。【選択図】図２
NITRIDED SILICON SUBSTRATE AND NITRIDED SILICON CIRCUIT BOARD USING THE SAME
PROBLEM TO BE SOLVED: To provide a nitrided silicon substrate small in variation of insulation property in a thickness direction and capable of providing a circuit board excellent in insulation property and high in credibility when used for the circuit board or the like.SOLUTION: There is provided a nitrogen substrate having more excellent performance by setting thickness T1 of a nitrided silicon substrate having nitrided silicon crystal particles 2 and a particle boundary phase 3 and thermal conductivity of 50 W/m K or more at 0.10 to 0.25 mm, a ratio of total length T2 o the particle boundary phase 3 in the thickness direction to thickness T1 of the nitrided silicon substrate in a cross section structure of the nitrided silicon substrate (T2/T1) at 0.01 to 0.30, variation from average of insulation bearing force when measured by a 4 terminal method with contacting an electrode to front and rear of the substrate at 20% or less, preferably 15% or less and further controlling maximum length of the particle boundary phase 3, average particle diameter of a longer diameter of the nitrided silicon crystal particles 2, pore diameter or the like.SELECTED DRAWING: Figure 2
【課題】厚さ方向における絶縁性のばらつきが小さく、回路基板などに使用した場合に、絶縁性が優れ信頼性が高い回路基板を得ることができる窒化珪素基板の提供。【解決手段】窒化珪素結晶粒子２と粒界相３を具備する熱伝導率が５０Ｗ／ｍ・Ｋ以上の窒化珪素基板において、窒化珪素基板の厚さＴ１が０．１０〜０．２５ｍｍであり、窒化珪素基板の断面組織は、窒化珪素基板の厚さＴ１に対し厚さ方向の粒界相３の合計長さＴ２の比（Ｔ２／Ｔ１）が０．０１〜０．３０であり、基板の表裏に電極を接触して４端子法で測定したときの絶縁耐力の平均値からのばらつきを２０％以下、好ましくは１５％以下とし、更に、粒界相３の最大長、窒化珪素結晶粒子２の長径の平均粒径、及び気孔径等を制御することで、一層優れた性能が得られる窒素基板。【選択図】図２
NITRIDED SILICON SUBSTRATE AND NITRIDED SILICON CIRCUIT BOARD USING THE SAME
窒化珪素基板およびそれを用いた窒化珪素回路基板
NAKAYAMA NORIO (author) / AOKI KATSUYUKI (author) / SANO TAKASHI (author)
2017-09-21
Patent
Electronic Resource
Japanese
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