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SILICON CARBIDE POWDER, AND PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL USING THE SAME AS RAW MATERIAL
PROBLEM TO BE SOLVED: To provide silicon carbide powder capable of suppressing a defect generated in an obtained silicon carbide single crystal, in the case of being used as a raw material, when producing the silicon carbide single crystal by a sublimation recrystallization method.SOLUTION: In silicon carbide powder, an initial bulk density is 0.85 g/cmor higher and 1.75 g/cmor lower, a tap bulk density is 0.9 g/cmor higher and 1.8 g/cmor lower, and a Blaine specific surface area is 300 cm/g or larger 400 cm/g or smaller. The ratio of the silicon carbide powder whose size range is over 44 μm and 2,000 μm or less is 98.5% or more, and the ratio of the silicon carbide powder whose size range is 44 μm or less is 1.5% or less.SELECTED DRAWING: None
【課題】昇華再結晶法で炭化珪素単結晶を製造する際の原料とした場合、得られる炭化珪素単結晶に発生する欠陥を抑制可能な炭化珪素粉末を提供する。【解決手段】炭化珪素粉末は、初期かさ密度が０．８５ｇ／ｃｍ３以上１．７５ｇ／ｃｍ３以下、タップかさ密度が０．９ｇ／ｃｍ３以上１．８ｇ／ｃｍ３以下、ブレーン比表面積が３００ｃｍ２／ｇ以上４００ｃｍ２／ｇ以下である。４４μｍを超え２０００μｍ以下の粒度範囲である炭化珪素粉末の割合が９８．５％以上、４４μｍ以下の粒度範囲である炭化珪素粉末の割合が１．５％以下である。【選択図】なし
SILICON CARBIDE POWDER, AND PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL USING THE SAME AS RAW MATERIAL
PROBLEM TO BE SOLVED: To provide silicon carbide powder capable of suppressing a defect generated in an obtained silicon carbide single crystal, in the case of being used as a raw material, when producing the silicon carbide single crystal by a sublimation recrystallization method.SOLUTION: In silicon carbide powder, an initial bulk density is 0.85 g/cmor higher and 1.75 g/cmor lower, a tap bulk density is 0.9 g/cmor higher and 1.8 g/cmor lower, and a Blaine specific surface area is 300 cm/g or larger 400 cm/g or smaller. The ratio of the silicon carbide powder whose size range is over 44 μm and 2,000 μm or less is 98.5% or more, and the ratio of the silicon carbide powder whose size range is 44 μm or less is 1.5% or less.SELECTED DRAWING: None
【課題】昇華再結晶法で炭化珪素単結晶を製造する際の原料とした場合、得られる炭化珪素単結晶に発生する欠陥を抑制可能な炭化珪素粉末を提供する。【解決手段】炭化珪素粉末は、初期かさ密度が０．８５ｇ／ｃｍ３以上１．７５ｇ／ｃｍ３以下、タップかさ密度が０．９ｇ／ｃｍ３以上１．８ｇ／ｃｍ３以下、ブレーン比表面積が３００ｃｍ２／ｇ以上４００ｃｍ２／ｇ以下である。４４μｍを超え２０００μｍ以下の粒度範囲である炭化珪素粉末の割合が９８．５％以上、４４μｍ以下の粒度範囲である炭化珪素粉末の割合が１．５％以下である。【選択図】なし
SILICON CARBIDE POWDER, AND PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL USING THE SAME AS RAW MATERIAL
炭化珪素粉末及びこれを原料とする炭化珪素単結晶の製造方法
MASUDA KENTA (author) / ISHIDA HIRONORI (author) / NONAKA KIYOSHI (author)
2018-07-05
Patent
Electronic Resource
Japanese
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