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LEAD-FREE FERROELECTRIC COMPOSITION AND THIN FILM
To provide a novel ferroelectric composition containing no lead and having excellent polarization performance, and a thin film consisting thereof.SOLUTION: A lead-free ferroelectric composition of this invention comprises an oxide containing Bi, Ti, Nd and Eu, in which each ratio of Bi, Ti, Nd and Eu element with respect to the total amount of Bi, Ti, Nd and Eu is 40 to 65 at%, 35 to 55 at%, 1 to 15 at%, and 1 to 15 at%,respectively, and a lead-free ferroelectric oxide thin film is also provided.SELECTED DRAWING: None
【課題】鉛を含まず、かつ優れた分極性能を有する新規の強誘電体組成物、及び、それから構成される薄膜を提供すること。【解決手段】Bi、Ti、Nd及びEuの合計量に対するBi、Ti、Nd及びEuそれぞれの元素比率が、40〜65at%、35〜55at%、1〜15at%、及び、1〜15at%である、Bi、Ti、Nd及びEuを含有する酸化物からなる非鉛強誘電体組成物、並びに、非鉛強誘電体酸化物薄膜。【選択図】なし
LEAD-FREE FERROELECTRIC COMPOSITION AND THIN FILM
To provide a novel ferroelectric composition containing no lead and having excellent polarization performance, and a thin film consisting thereof.SOLUTION: A lead-free ferroelectric composition of this invention comprises an oxide containing Bi, Ti, Nd and Eu, in which each ratio of Bi, Ti, Nd and Eu element with respect to the total amount of Bi, Ti, Nd and Eu is 40 to 65 at%, 35 to 55 at%, 1 to 15 at%, and 1 to 15 at%,respectively, and a lead-free ferroelectric oxide thin film is also provided.SELECTED DRAWING: None
【課題】鉛を含まず、かつ優れた分極性能を有する新規の強誘電体組成物、及び、それから構成される薄膜を提供すること。【解決手段】Bi、Ti、Nd及びEuの合計量に対するBi、Ti、Nd及びEuそれぞれの元素比率が、40〜65at%、35〜55at%、1〜15at%、及び、1〜15at%である、Bi、Ti、Nd及びEuを含有する酸化物からなる非鉛強誘電体組成物、並びに、非鉛強誘電体酸化物薄膜。【選択図】なし
LEAD-FREE FERROELECTRIC COMPOSITION AND THIN FILM
非鉛強誘電体組成物及び薄膜
OFUNE MASABUMI (author) / UDA TSUBASA (author) / KAMEI TADASUKE (author)
2019-10-31
Patent
Electronic Resource
Japanese
Composition for ferroelectric thin film formation and method for forming ferroelectric thin film
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