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THERMAL CONDUCTION ANISOTROPIC SiC MATERIAL
To provide an SiC material having anisotropic thermal conduction.SOLUTION: In a thermal conduction anisotropic SiC material comprising a β-SiC material, in the state where a (111) plane is oriented in a vertical direction to a plate thickness direction, a half width of a XRD peak on the (111) plane is 0.25 degree or less in a 2θ/θ measuring method, and the amount of impurities is 500 ppm or less, a crystal grain boundary exists in parallel with the plate thickness direction as much as 70% or more.SELECTED DRAWING: Figure 1
【課題】熱伝導に異方性を持たせたＳｉＣ材を提供することにある。【解決手段】本発明の熱伝導異方性ＳｉＣ材は、β−ＳｉＣ材からなり、（１１１）面を板厚方向に対して垂直方向に配向させて、前記（１１１）面のＸＲＤピークの半値幅が２θ／θ測定法で０．２５度以下であり、不純物量が５００ｐｐｍ以下であり、結晶粒界が前記板厚方向に７０％以上平行に存在することを特徴とする。【選択図】 図１
THERMAL CONDUCTION ANISOTROPIC SiC MATERIAL
To provide an SiC material having anisotropic thermal conduction.SOLUTION: In a thermal conduction anisotropic SiC material comprising a β-SiC material, in the state where a (111) plane is oriented in a vertical direction to a plate thickness direction, a half width of a XRD peak on the (111) plane is 0.25 degree or less in a 2θ/θ measuring method, and the amount of impurities is 500 ppm or less, a crystal grain boundary exists in parallel with the plate thickness direction as much as 70% or more.SELECTED DRAWING: Figure 1
【課題】熱伝導に異方性を持たせたＳｉＣ材を提供することにある。【解決手段】本発明の熱伝導異方性ＳｉＣ材は、β−ＳｉＣ材からなり、（１１１）面を板厚方向に対して垂直方向に配向させて、前記（１１１）面のＸＲＤピークの半値幅が２θ／θ測定法で０．２５度以下であり、不純物量が５００ｐｐｍ以下であり、結晶粒界が前記板厚方向に７０％以上平行に存在することを特徴とする。【選択図】 図１
THERMAL CONDUCTION ANISOTROPIC SiC MATERIAL
熱伝導異方性ＳｉＣ材
KAWAHARA FUMITOMO (author)
2020-03-05
Patent
Electronic Resource
Japanese
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