A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
GRAPHITE OR CERAMIC SUBSTRATE, SUBSTRATE MANUFACTURING METHOD, SILICON CARBIDE FILM FORMING METHOD, AND SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD
To provide a graphite or ceramic substrate capable of separating a SiC polycrystalline film and a support substrate at low cost and easily in a method that manufactures a SiC polycrystalline substrate by forming a SiC polycrystalline film on a supporting substrate using a CVD method and then separating it from the supporting substrate, a substrate manufacturing method, a silicon carbide film forming method, and a silicon carbide substrate manufacturing method.SOLUTION: The graphite or ceramic substrate includes on a surface a silicon dioxide film having an average film thickness of 5 nm to 10 μm.SELECTED DRAWING: Figure 1
【課題】ＣＶＤ法によって支持基板上にＳｉＣ多結晶膜を成膜したのち、支持基板から分離することでＳｉＣ多結晶基板を製造する場合において、安価かつ容易に、ＳｉＣ多結晶膜と支持基板を容易に分離することができる、黒鉛製またはセラミックス製の基板、基板の製造方法、炭化珪素の成膜方法および炭化珪素基板の製造方法を提供する。【解決手段】表面に平均膜厚５ｎｍ〜１０μｍの二酸化珪素膜を備える黒鉛製またはセラミックス製の基板。【選択図】図１
GRAPHITE OR CERAMIC SUBSTRATE, SUBSTRATE MANUFACTURING METHOD, SILICON CARBIDE FILM FORMING METHOD, AND SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD
To provide a graphite or ceramic substrate capable of separating a SiC polycrystalline film and a support substrate at low cost and easily in a method that manufactures a SiC polycrystalline substrate by forming a SiC polycrystalline film on a supporting substrate using a CVD method and then separating it from the supporting substrate, a substrate manufacturing method, a silicon carbide film forming method, and a silicon carbide substrate manufacturing method.SOLUTION: The graphite or ceramic substrate includes on a surface a silicon dioxide film having an average film thickness of 5 nm to 10 μm.SELECTED DRAWING: Figure 1
【課題】ＣＶＤ法によって支持基板上にＳｉＣ多結晶膜を成膜したのち、支持基板から分離することでＳｉＣ多結晶基板を製造する場合において、安価かつ容易に、ＳｉＣ多結晶膜と支持基板を容易に分離することができる、黒鉛製またはセラミックス製の基板、基板の製造方法、炭化珪素の成膜方法および炭化珪素基板の製造方法を提供する。【解決手段】表面に平均膜厚５ｎｍ〜１０μｍの二酸化珪素膜を備える黒鉛製またはセラミックス製の基板。【選択図】図１
GRAPHITE OR CERAMIC SUBSTRATE, SUBSTRATE MANUFACTURING METHOD, SILICON CARBIDE FILM FORMING METHOD, AND SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD
黒鉛製またはセラミックス製の基板、基板の製造方法、炭化珪素の成膜方法および炭化珪素基板の製造方法
NISHIMURA EIICHIRO (author)
2020-06-11
Patent
Electronic Resource
Japanese
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