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GRAPHITE BASE MATERIAL, FILM DEPOSITION METHOD OF SILICON CARBIDE, AND MANUFACTURING METHOD OF SILICON CARBIDE SUBSTRATE
To provide a graphite base material, a film deposition method of silicon carbide, and a manufacturing method of a silicon carbide substrate that do not generate cracks and nicks on a silicon carbide film deposited by chemical vapor deposition and can efficiently manufacture a silicon carbide substrate having a smooth surface with minor warp without requiring a complex process.SOLUTION: A disk-shaped graphite base material 100 comprises a semiellipse-shaped first curved surface 10 protruding outside, a semiellipse-shaped second curved surface 20 protruding outside that is located opposite to the first curved surface and has the same diameter D as the first curved surface, a cylindrical side surface 30 that has the same diameter as the first curved surface and the second curved surface and connects the circumference 11 of the first curved surface and the circumference of the second curved surface. The side surface has a plurality of cavities 32 having openings 32a, 32b opening outside.SELECTED DRAWING: Figure 1
【課題】煩雑な工程を必要とすることなく、化学蒸着により成膜した炭化珪素膜に亀裂や割れが発生せず、また、反りが少なく、表面の平滑な炭化珪素基板を能率よく製造することが可能な黒鉛基材、並びに炭化珪素の成膜方法および炭化珪素基板の製造方法の提供。【解決手段】外側に突出する半楕円体形状の第１曲面１０と、前記第１曲面とは反対の面であって、かつ、直径Ｄが同一であり、外側に突出する半楕円体形状の第２曲面２０と、前記第１曲面および前記第２曲面の直径と同一の直径であり、前記第１曲面の円周１１と前記第２曲面の円周とをつなぐ円柱状の側面部３０と、を備え、前記側面部は、外部へ開口する複数の開口部３２ａ，３２ｂを有する空隙３２を備える、円盤形状の黒鉛基材１００。【選択図】図１
GRAPHITE BASE MATERIAL, FILM DEPOSITION METHOD OF SILICON CARBIDE, AND MANUFACTURING METHOD OF SILICON CARBIDE SUBSTRATE
To provide a graphite base material, a film deposition method of silicon carbide, and a manufacturing method of a silicon carbide substrate that do not generate cracks and nicks on a silicon carbide film deposited by chemical vapor deposition and can efficiently manufacture a silicon carbide substrate having a smooth surface with minor warp without requiring a complex process.SOLUTION: A disk-shaped graphite base material 100 comprises a semiellipse-shaped first curved surface 10 protruding outside, a semiellipse-shaped second curved surface 20 protruding outside that is located opposite to the first curved surface and has the same diameter D as the first curved surface, a cylindrical side surface 30 that has the same diameter as the first curved surface and the second curved surface and connects the circumference 11 of the first curved surface and the circumference of the second curved surface. The side surface has a plurality of cavities 32 having openings 32a, 32b opening outside.SELECTED DRAWING: Figure 1
【課題】煩雑な工程を必要とすることなく、化学蒸着により成膜した炭化珪素膜に亀裂や割れが発生せず、また、反りが少なく、表面の平滑な炭化珪素基板を能率よく製造することが可能な黒鉛基材、並びに炭化珪素の成膜方法および炭化珪素基板の製造方法の提供。【解決手段】外側に突出する半楕円体形状の第１曲面１０と、前記第１曲面とは反対の面であって、かつ、直径Ｄが同一であり、外側に突出する半楕円体形状の第２曲面２０と、前記第１曲面および前記第２曲面の直径と同一の直径であり、前記第１曲面の円周１１と前記第２曲面の円周とをつなぐ円柱状の側面部３０と、を備え、前記側面部は、外部へ開口する複数の開口部３２ａ，３２ｂを有する空隙３２を備える、円盤形状の黒鉛基材１００。【選択図】図１
GRAPHITE BASE MATERIAL, FILM DEPOSITION METHOD OF SILICON CARBIDE, AND MANUFACTURING METHOD OF SILICON CARBIDE SUBSTRATE
黒鉛基材、炭化珪素の成膜方法および炭化珪素基板の製造方法
TAKATSUKA YUJI (author)
2020-06-04
Patent
Electronic Resource
Japanese
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