A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
METHOD FOR SINTERING NITROGEN-SOLUTIONIZED SILICON CARBIDE POWDER, AND METHOD FOR PRODUCING SILICON CARBIDE POLYCRYSTAL SUBSTRATE
To provide: a method for sintering nitrogen-solutionized silicon carbide powder, the method being more inexpensive and having better productivity than ever before and capable of obtaining a plate-like SiC polycrystal substrate; and a method for producing a silicon carbide polycrystal substrate.SOLUTION: A method for sintering nitrogen-solutionized silicon carbide powder includes a sintering step of sintering nitrogen-solutionized silicon carbide powder under an inert atmosphere to obtain a disk-like silicon carbide polycrystalline sintered body, the silicon carbide powder being obtained by solutionizing nitrogen to silicon carbide powder having a modal diameter of 50 nm. In the sintering step, the disk-like nitrogen-solutionized silicon carbide powder is sintered within a cylindrical carbon container, the silicon carbide powder being partitioned with disk-like carbon spacers. The thickness of the spacer is 1 mm or more and the thickness of the nitrogen-solutionized silicon carbide powder partitioned with the carbon spacers is 1 mm or more.SELECTED DRAWING: Figure 3
【課題】従来よりも安価で生産性が良く板状のＳｉＣ多結晶基板を得ることのできる、窒素固溶炭化珪素粉末の焼結方法および炭化珪素多結晶基板の製造方法を提供する。【解決手段】モード径が５０ｎｍ以下である炭化珪素の粉末に窒素を固溶させて得られる窒素固溶炭化珪素粉末を、不活性雰囲気中で焼結して炭化珪素多結晶の円盤状の焼結体を得る焼結工程を含み、前記焼結工程は、炭素製の円筒状容器の内部で、炭素製で円盤状のスペーサーで仕切られた円盤状の前記窒素固溶炭化珪素粉末を焼結する工程であり、前記スペーサーの厚みは１ｍｍ以上であり、前記炭素製のスペーサーで仕切られた前記窒素固溶炭化珪素粉末の厚みは１ｍｍ以上である、窒素固溶炭化珪素粉末の焼結方法。【選択図】図３
METHOD FOR SINTERING NITROGEN-SOLUTIONIZED SILICON CARBIDE POWDER, AND METHOD FOR PRODUCING SILICON CARBIDE POLYCRYSTAL SUBSTRATE
To provide: a method for sintering nitrogen-solutionized silicon carbide powder, the method being more inexpensive and having better productivity than ever before and capable of obtaining a plate-like SiC polycrystal substrate; and a method for producing a silicon carbide polycrystal substrate.SOLUTION: A method for sintering nitrogen-solutionized silicon carbide powder includes a sintering step of sintering nitrogen-solutionized silicon carbide powder under an inert atmosphere to obtain a disk-like silicon carbide polycrystalline sintered body, the silicon carbide powder being obtained by solutionizing nitrogen to silicon carbide powder having a modal diameter of 50 nm. In the sintering step, the disk-like nitrogen-solutionized silicon carbide powder is sintered within a cylindrical carbon container, the silicon carbide powder being partitioned with disk-like carbon spacers. The thickness of the spacer is 1 mm or more and the thickness of the nitrogen-solutionized silicon carbide powder partitioned with the carbon spacers is 1 mm or more.SELECTED DRAWING: Figure 3
【課題】従来よりも安価で生産性が良く板状のＳｉＣ多結晶基板を得ることのできる、窒素固溶炭化珪素粉末の焼結方法および炭化珪素多結晶基板の製造方法を提供する。【解決手段】モード径が５０ｎｍ以下である炭化珪素の粉末に窒素を固溶させて得られる窒素固溶炭化珪素粉末を、不活性雰囲気中で焼結して炭化珪素多結晶の円盤状の焼結体を得る焼結工程を含み、前記焼結工程は、炭素製の円筒状容器の内部で、炭素製で円盤状のスペーサーで仕切られた円盤状の前記窒素固溶炭化珪素粉末を焼結する工程であり、前記スペーサーの厚みは１ｍｍ以上であり、前記炭素製のスペーサーで仕切られた前記窒素固溶炭化珪素粉末の厚みは１ｍｍ以上である、窒素固溶炭化珪素粉末の焼結方法。【選択図】図３
METHOD FOR SINTERING NITROGEN-SOLUTIONIZED SILICON CARBIDE POWDER, AND METHOD FOR PRODUCING SILICON CARBIDE POLYCRYSTAL SUBSTRATE
窒素固溶炭化珪素粉末の焼結方法および炭化珪素多結晶基板の製造方法
KITAGAWA TAIZO (author)
2021-09-16
Patent
Electronic Resource
Japanese
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