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SILICON CARBIDE POROUS BODY, HONEYCOMB STRUCTURE, ELECTRICALLY HEATED CATALYST, AND METHOD OF PRODUCING SILICON CARBIDE POROUS BODY
To provide a silicon carbide porous body of high oxidation resistance.SOLUTION: The silicon carbide porous body includes β-SiC particles, Si particles, and metal silicide particles. The maximum particle diameter of β-SiC particles is not smaller than 15 μm. The content of Si particles is not less than 10 mass%. The maximum particle diameter of Si particles is not larger than 40 μm. An oxide coating film of a thickness of not smaller than 0.01 μm and not larger than 5 μm is provided on the surface of Si particles. Thereby, a silicon carbide porous body of high oxidation resistance (namely, exhibiting a low resistance changing rate subsequent to exposure to a high temperature oxidation atmosphere) can be provided.SELECTED DRAWING: Figure 1
【課題】高耐酸化性を有する炭化珪素質多孔体を提供する。【解決手段】炭化珪素質多孔体は、β－ＳｉＣ粒子と、Ｓｉ粒子と、金属シリサイド粒子とを含む。β－ＳｉＣ粒子の最大粒径は１５μｍ以上である。Ｓｉ粒子の含有率は１０質量％以上である。Ｓｉ粒子の最大粒径は４０μｍ以下である。また、Ｓｉ粒子の表面に、厚さ０．０１μｍ以上かつ５μｍ以下の酸化物被膜が設けられる。これにより、高耐酸化性を有する（すなわち、高温酸化雰囲気下に曝露された後の抵抗変化率が小さい）炭化珪素質多孔体を提供することができる。【選択図】図１
SILICON CARBIDE POROUS BODY, HONEYCOMB STRUCTURE, ELECTRICALLY HEATED CATALYST, AND METHOD OF PRODUCING SILICON CARBIDE POROUS BODY
To provide a silicon carbide porous body of high oxidation resistance.SOLUTION: The silicon carbide porous body includes β-SiC particles, Si particles, and metal silicide particles. The maximum particle diameter of β-SiC particles is not smaller than 15 μm. The content of Si particles is not less than 10 mass%. The maximum particle diameter of Si particles is not larger than 40 μm. An oxide coating film of a thickness of not smaller than 0.01 μm and not larger than 5 μm is provided on the surface of Si particles. Thereby, a silicon carbide porous body of high oxidation resistance (namely, exhibiting a low resistance changing rate subsequent to exposure to a high temperature oxidation atmosphere) can be provided.SELECTED DRAWING: Figure 1
【課題】高耐酸化性を有する炭化珪素質多孔体を提供する。【解決手段】炭化珪素質多孔体は、β－ＳｉＣ粒子と、Ｓｉ粒子と、金属シリサイド粒子とを含む。β－ＳｉＣ粒子の最大粒径は１５μｍ以上である。Ｓｉ粒子の含有率は１０質量％以上である。Ｓｉ粒子の最大粒径は４０μｍ以下である。また、Ｓｉ粒子の表面に、厚さ０．０１μｍ以上かつ５μｍ以下の酸化物被膜が設けられる。これにより、高耐酸化性を有する（すなわち、高温酸化雰囲気下に曝露された後の抵抗変化率が小さい）炭化珪素質多孔体を提供することができる。【選択図】図１
SILICON CARBIDE POROUS BODY, HONEYCOMB STRUCTURE, ELECTRICALLY HEATED CATALYST, AND METHOD OF PRODUCING SILICON CARBIDE POROUS BODY
炭化珪素質多孔体、ハニカム構造体、電気加熱触媒および炭化珪素質多孔体の製造方法
SUZUKI SHINJI (author) / ATSUJI KYOHEI (author) / TOMITA TAKAHIRO (author)
2022-10-07
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
/
B01D
SEPARATION
,
Trennen
/
B01J
Chemische oder physikalische Verfahren, z.B. Katalyse oder Kolloidchemie
,
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY
/
F01N
GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL
,
Schalldämpfer oder Auspuffvorrichtungen für Gase von Kraft- und Arbeitsmaschinen oder von Kraftmaschinen allgemein
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