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A platform for research: civil engineering, architecture and urbanism
Heat shield device for low oxygen single crystal growth of single crystal ingot growth device
본 발명은 단결정 잉곳 성장장치의 저산소 단결정 성장을 위한 열차폐 장치에 관한 것으로, 실리콘 융액이 담기는 도가니; 상기 도가니를 감싸는 흑연 도가니; 상기 흑연도가니의 중앙에서 하부 둘레를 감사며, 상기 흑연 도가니와 소정거리 이격되어 설치되는 열차폐부; 상기 열차폐부와 상기 흑연 도가니를 연결하는 연결부를 포함한다. 이러한 본 발명의 제1 실시예에 따른 열차폐 장치와 제2 실시예에 따른 열차폐 코팅을 통해 결정성장시의 도가니 바닥의 온도를 낮추어 결정으로 유입되는 산소농도를 줄여 고 품질 수준의 저산소 단결정 성장을 통하여, 반도체 Device에서의 BMD 농도를 줄임으로써 수율을 향상하는데 기여할 수 있다.
An embodiment of the present invention provides a heat shield device for low oxygen single crystal growth of a single crystal ingot growth device, including: a crucible containing a silicon melt; a graphite crucible surrounding the crucible; a heat shield made of a low-emissivity (emissivity<0.3) material that surrounds a central lower portion of the graphite crucible and is spaced apart from the graphite crucible by a predetermined distance; and a connection part connecting the heat shield and the graphite crucible. Through the heat shield device according to the first embodiment of the present invention and the heat shield coating according to the second embodiment of the present invention, the concentration of oxygen flowing into the crystal may be reduced by lowering the temperature of the bottom of the crucible during the crystal growth, and the yield may be improved by reducing the BMD concentration in the semiconductor device through the growth of high-quality and low-oxygen single crystal.
Heat shield device for low oxygen single crystal growth of single crystal ingot growth device
본 발명은 단결정 잉곳 성장장치의 저산소 단결정 성장을 위한 열차폐 장치에 관한 것으로, 실리콘 융액이 담기는 도가니; 상기 도가니를 감싸는 흑연 도가니; 상기 흑연도가니의 중앙에서 하부 둘레를 감사며, 상기 흑연 도가니와 소정거리 이격되어 설치되는 열차폐부; 상기 열차폐부와 상기 흑연 도가니를 연결하는 연결부를 포함한다. 이러한 본 발명의 제1 실시예에 따른 열차폐 장치와 제2 실시예에 따른 열차폐 코팅을 통해 결정성장시의 도가니 바닥의 온도를 낮추어 결정으로 유입되는 산소농도를 줄여 고 품질 수준의 저산소 단결정 성장을 통하여, 반도체 Device에서의 BMD 농도를 줄임으로써 수율을 향상하는데 기여할 수 있다.
An embodiment of the present invention provides a heat shield device for low oxygen single crystal growth of a single crystal ingot growth device, including: a crucible containing a silicon melt; a graphite crucible surrounding the crucible; a heat shield made of a low-emissivity (emissivity<0.3) material that surrounds a central lower portion of the graphite crucible and is spaced apart from the graphite crucible by a predetermined distance; and a connection part connecting the heat shield and the graphite crucible. Through the heat shield device according to the first embodiment of the present invention and the heat shield coating according to the second embodiment of the present invention, the concentration of oxygen flowing into the crystal may be reduced by lowering the temperature of the bottom of the crucible during the crystal growth, and the yield may be improved by reducing the BMD concentration in the semiconductor device through the growth of high-quality and low-oxygen single crystal.
Heat shield device for low oxygen single crystal growth of single crystal ingot growth device
단결정 잉곳 성장장치의 저산소 단결정 성장을 위한 열차폐 장치
2022-03-31
Patent
Electronic Resource
Korean
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