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TUNGSTEN SILICIDE TARGET AND METHOD OF MANUFACTURING SAME
종래와는 다른 방법으로 스퍼터링 시의 파티클의 발생을 억제 가능한 텅스텐 실리사이드 타깃을 제공한다. 스퍼터면에 있어서의 크기 50㎛ 이상의 저밀도 반소결 부분의 개수가 80000㎟당 5개 이하인 텅스텐 실리사이드 타깃.
A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 µm or more per 80000 mm2 on the sputtering surface.
TUNGSTEN SILICIDE TARGET AND METHOD OF MANUFACTURING SAME
종래와는 다른 방법으로 스퍼터링 시의 파티클의 발생을 억제 가능한 텅스텐 실리사이드 타깃을 제공한다. 스퍼터면에 있어서의 크기 50㎛ 이상의 저밀도 반소결 부분의 개수가 80000㎟당 5개 이하인 텅스텐 실리사이드 타깃.
A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 µm or more per 80000 mm2 on the sputtering surface.
TUNGSTEN SILICIDE TARGET AND METHOD OF MANUFACTURING SAME
텅스텐 실리사이드 타깃 및 그 제조 방법
2023-04-10
Patent
Electronic Resource
Korean
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