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TUNGSTEN SILICIDE TARGET AND METHOD OF MANUFACTURING SAME
A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 µm or more per 80000 mm2 on the sputtering surface.
TUNGSTEN SILICIDE TARGET AND METHOD OF MANUFACTURING SAME
A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 µm or more per 80000 mm2 on the sputtering surface.
TUNGSTEN SILICIDE TARGET AND METHOD OF MANUFACTURING SAME
WOLFRAMSILIZID-TARGET UND VERFAHREN ZU DESSEN HERSTELLUNG
CIBLE EN SILICIURE DE TUNGSTÈNE ET SON PROCÉDÉ DE FABRICATION
ODA KUNIHIRO (author) / ASANO TAKAYUKI (author)
2024-06-12
Patent
Electronic Resource
English
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