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SILICON NITRIDE MATERIAL WITH EXTREME DOUBLE MICROSTRUCTURE
One embodiment of the present invention relates to a silicon nitride ceramic material having an extreme double microstructure, and provides a method for maximizing the thermal conductivity of the material by reducing the number of intergranular interfaces that resist thermal diffusion. In an embodiment of the present invention, a silicon nitride material having an extreme double microstructure is a silicon nitride-based ceramic composition containing Y2O3 and MgO as additives.
본 발명의 일실시예는 극단적인 이중 미세구조를 가진 질화규소 세라믹 소재로, 열확산에 저항하는 입자 간계면의 숫자를 감소시킴으로써 소재의 열전도도를 극대화시키는 특성을 가지게 하는 방법을 제공한다.
SILICON NITRIDE MATERIAL WITH EXTREME DOUBLE MICROSTRUCTURE
One embodiment of the present invention relates to a silicon nitride ceramic material having an extreme double microstructure, and provides a method for maximizing the thermal conductivity of the material by reducing the number of intergranular interfaces that resist thermal diffusion. In an embodiment of the present invention, a silicon nitride material having an extreme double microstructure is a silicon nitride-based ceramic composition containing Y2O3 and MgO as additives.
본 발명의 일실시예는 극단적인 이중 미세구조를 가진 질화규소 세라믹 소재로, 열확산에 저항하는 입자 간계면의 숫자를 감소시킴으로써 소재의 열전도도를 극대화시키는 특성을 가지게 하는 방법을 제공한다.
SILICON NITRIDE MATERIAL WITH EXTREME DOUBLE MICROSTRUCTURE
극단적인 이중 미세구조를 가진 질화규소 소재
KIM HA NEUL (author)
2023-02-14
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
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