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Methods of forming silicon carbide by spark plasma sintering
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
Methods of forming silicon carbide by spark plasma sintering
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
Methods of forming silicon carbide by spark plasma sintering
CHU HENRY S (author) / O'BRIEN ROBERT C (author) / COOK STEVEN K (author) / BAKAS MICHAEL P (author)
2019-02-19
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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