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Methods of forming articles including silicon carbide by spark plasma sintering
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
Methods of forming articles including silicon carbide by spark plasma sintering
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
Methods of forming articles including silicon carbide by spark plasma sintering
CHU HENRY S (author) / O'BRIEN ROBERT C (author) / COOK STEVEN K (author) / BAKAS MICHAEL P (author)
2019-07-30
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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