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Device including semiconductor substrate containing gallium nitride and method for producing the same
A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
Device including semiconductor substrate containing gallium nitride and method for producing the same
A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
Device including semiconductor substrate containing gallium nitride and method for producing the same
FUJIKANE MASAKI (author)
2019-08-13
Patent
Electronic Resource
English
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METHOD FOR PRODUCING A DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE
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