A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
METHOD FOR PRODUCING A DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE
A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
METHOD FOR PRODUCING A DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE
A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
METHOD FOR PRODUCING A DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE
VERFAHREN ZUR HERSTELLUNG EINER VORRICHTUNG MIT EINEM HALBLEITERSUBSTRAT MIT GALLIUMNITRID
PROCÉDÉ DE PRODUCTION D'UN DISPOSITIF COMPRENANT UN SUBSTRAT SEMI-CONDUCTEUR CONTENANT DU NITRURE DE GALLIUM
FUJIKANE MASAKI (author)
2019-03-06
Patent
Electronic Resource
English
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