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Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin film
A sputtering target including an oxide that includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.
Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin film
A sputtering target including an oxide that includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.
Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin film
EBATA KAZUAKI (author) / NISHIMURA MAMI (author) / TAJIMA NOZOMI (author)
2022-10-04
Patent
Electronic Resource
English
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