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Semiconductor Composition Containing Iron, Dysprosium, and Terbium
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
Semiconductor Composition Containing Iron, Dysprosium, and Terbium
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
Semiconductor Composition Containing Iron, Dysprosium, and Terbium
POOSER RAPHAEL C (author) / LAWRIE BENJAMIN J (author) / BADDORF ARTHUR P (author) / MALASI ABHINAV (author) / TAZ HUMAIRA (author) / FARAH ANNETTEE E (author) / KALYANARAMAN RAMAKRISHNAN (author) / DUSCHER GERD JOSEF MANSFRED (author) / PATEL MAULIK K (author)
2017-01-05
Patent
Electronic Resource
English
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