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Semiconductor Composition Containing Iron, Dysprosium, and Terbium
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
Semiconductor Composition Containing Iron, Dysprosium, and Terbium
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
Semiconductor Composition Containing Iron, Dysprosium, and Terbium
POOSER RAPHAEL C (Autor:in) / LAWRIE BENJAMIN J (Autor:in) / BADDORF ARTHUR P (Autor:in) / MALASI ABHINAV (Autor:in) / TAZ HUMAIRA (Autor:in) / FARAH ANNETTEE E (Autor:in) / KALYANARAMAN RAMAKRISHNAN (Autor:in) / DUSCHER GERD JOSEF MANSFRED (Autor:in) / PATEL MAULIK K (Autor:in)
05.01.2017
Patent
Elektronische Ressource
Englisch
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