A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
CERAMIC STRUCTURE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.
CERAMIC STRUCTURE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.
CERAMIC STRUCTURE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
ATSUJI KYOHEI (author) / NISHIMURA NOBORU (author) / KATSUDA YUJI (author)
2017-08-31
Patent
Electronic Resource
English
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