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HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME
The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m·K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I29.3°, I29.7°, I27.0°, and I36.1°, a peak ratio (I29.3°)/(I27.0°+I36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I29.7°)/(I27.0°+I36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m·K or more, and excellence in insulating properties and strength.
HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME
The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m·K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I29.3°, I29.7°, I27.0°, and I36.1°, a peak ratio (I29.3°)/(I27.0°+I36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I29.7°)/(I27.0°+I36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m·K or more, and excellence in insulating properties and strength.
HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME
AOKI KATSUYUKI (author)
2018-01-04
Patent
Electronic Resource
English
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