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HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-α radiation.
HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-α radiation.
HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
YAMANA KEITA (author) / NOBORI KAZUHIRO (author) / TORII KENGO (author)
2019-08-08
Patent
Electronic Resource
English
CERAMIC HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
| European Patent Office | 2023