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Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device
The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.
Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device
The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.
Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device
MIYANAGA MIKI (author) / WATATANI KENICHI (author) / AWATA HIDEAKI (author)
2020-07-23
Patent
Electronic Resource
English
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