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BONDED BODY, CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.
BONDED BODY, CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.
BONDED BODY, CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
YONETSU MAKI (author) / SUENAGA SEIICHI (author) / FUJISAWA SACHIKO (author) / NABA TAKAYUKI (author)
2021-12-23
Patent
Electronic Resource
English
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