A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
MICRON SCALE TIN OXIDE-BASED SEMICONDUCTOR DEVICES
Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.
MICRON SCALE TIN OXIDE-BASED SEMICONDUCTOR DEVICES
Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.
MICRON SCALE TIN OXIDE-BASED SEMICONDUCTOR DEVICES
PARK JISUNG (author)
2022-06-30
Patent
Electronic Resource
English
Thermo-Mechanical Failure Criterion at the Micron Scale in Electronic Devices
| British Library Online Contents | 2003
Ferromagnetism in sub-micron scale BiFeO3
| British Library Online Contents | 2011
Hardness trends in micron scale indentation
| British Library Online Contents | 2003