A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
A member for semiconductor manufacturing apparatus of the present invention includes an AlN ceramic substrate with a surface provided with projections for wafer placement. At least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region. The predetermined depth is 5 μm or less. The oxygen content rate of the surface layer region is higher than the oxygen content rate of the base material region.
MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
A member for semiconductor manufacturing apparatus of the present invention includes an AlN ceramic substrate with a surface provided with projections for wafer placement. At least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region. The predetermined depth is 5 μm or less. The oxygen content rate of the surface layer region is higher than the oxygen content rate of the base material region.
MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
OGISO YUSUKE (author)
2024-01-04
Patent
Electronic Resource
English
SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER AND SEMICONDUCTOR MANUFACTURING APPARATUS
| European Patent Office | 2022
| European Patent Office | 2018