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DENSE SINTERED MATERIAL OF SILICON CARBIDE WITH VERY LOW ELECTRICAL RESISTIVITY

MASSASSO GIOVANNI / BOUSQUET COSTANA

A polycrystalline sintered ceramic material of very low electrical resistivity includes by mass more than 95% silicon carbide (SiC), less than 1.5% silicon in another form than SiC, less than 2.5% carbon in another form than SiC, less than 1% oxygen (O), less than 0.5% aluminum (Al), less than 0.5% of the elements Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, less than 0.5% alkali elements, less than 0.5% alkaline earth, between 0.1 and 1.5% nitrogen (N), the other elements forming the complement to 100%, wherein the grains of the above material have a median equivalent diameter of between 0.5 and 5 micrometers, the mass ratio of SiC alpha (α)/SiC beta (β) is less than 0.1, and the total porosity represents less than 15% by volume of the material.

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DENSE SINTERED MATERIAL OF SILICON CARBIDE WITH VERY LOW ELECTRICAL RESISTIVITY

MASSASSO GIOVANNI / BOUSQUET COSTANA

A polycrystalline sintered ceramic material of very low electrical resistivity includes by mass more than 95% silicon carbide (SiC), less than 1.5% silicon in another form than SiC, less than 2.5% carbon in another form than SiC, less than 1% oxygen (O), less than 0.5% aluminum (Al), less than 0.5% of the elements Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, less than 0.5% alkali elements, less than 0.5% alkaline earth, between 0.1 and 1.5% nitrogen (N), the other elements forming the complement to 100%, wherein the grains of the above material have a median equivalent diameter of between 0.5 and 5 micrometers, the mass ratio of SiC alpha (α)/SiC beta (β) is less than 0.1, and the total porosity represents less than 15% by volume of the material.

DENSE SINTERED MATERIAL OF SILICON CARBIDE WITH VERY LOW ELECTRICAL RESISTIVITY

MASSASSO GIOVANNI / BOUSQUET COSTANA

A polycrystalline sintered ceramic material of very low electrical resistivity includes by mass more than 95% silicon carbide (SiC), less than 1.5% silicon in another form than SiC, less than 2.5% carbon in another form than SiC, less than 1% oxygen (O), less than 0.5% aluminum (Al), less than 0.5% of the elements Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, less than 0.5% alkali elements, less than 0.5% alkaline earth, between 0.1 and 1.5% nitrogen (N), the other elements forming the complement to 100%, wherein the grains of the above material have a median equivalent diameter of between 0.5 and 5 micrometers, the mass ratio of SiC alpha (α)/SiC beta (β) is less than 0.1, and the total porosity represents less than 15% by volume of the material.

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Title:

DENSE SINTERED MATERIAL OF SILICON CARBIDE WITH VERY LOW ELECTRICAL RESISTIVITY

Contributors:

MASSASSO GIOVANNI (author) / BOUSQUET COSTANA (author)

Publication date:

2024-06-27

Type of media:

Patent

Type of material:

Electronic Resource

Language:

English

Classification:

IPC: C04B Kalk , LIME

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